Magnetic and Transport Properties of Mn-Si Films Synthesized on 4H-SiC(0001) Substrates

2007 ◽  
Vol 546-549 ◽  
pp. 2167-2170 ◽  
Author(s):  
Wen Hong Wang ◽  
Fumi Yoshi Takano ◽  
Hiro Nori Ofuchi ◽  
Hiro Akinaga
Keyword(s):  
Magnetic Properties ◽  
Hall Effect ◽  
Molecular Beam ◽  
Anomalous Hall Effect ◽  
Dual Phase ◽  
Temperature Dependent ◽  
Metallic Behavior ◽  
Effect Theory ◽  
Si Films ◽  
Annealing Method

We report a systematic study of the thickness dependence of magnetic properties in carbon-incorporated Mn-Si films synthesized on a 4H-SiC(0001) homoepitaxial wafer by molecular beam epitaxy (MBE) and an annealing method. Magnetization characteristics reveal a dual-phase characteristic in films with decreasing thickness. The anomalous Hall effect has been observed in the thicker film; however, the observed temperature dependence cannot be explained by traditional anomalous Hall effect theory. The temperature dependent resisitivity indicates the film has a metallic behavior.

scholarly journals The structural, optical and magnetic properties and anomalous Hall effect of InMnP:Zn epilayers

2008 ◽  
Vol 10 (11) ◽  
pp. 115002 ◽  
Author(s):  
Yoon Shon ◽  
Sejoon Lee ◽  
D Y Kim ◽  
T W Kang ◽  
Chong S Yoon ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Optical And Magnetic Properties

scholarly journals Influence of disorder on magnetic properties and intrinsic anomalous hall effect in epitaxial Co2FeAl film

2017 ◽  
Vol 254 ◽  
pp. 48-51 ◽  
Author(s):  
K.K. Meng ◽  
J. Miao ◽  
X.G. Xu ◽  
Y. Wu ◽  
J.H. Zhao ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Hall Effect ◽  
Anomalous Hall Effect

Unusual Magnetic Properties of Fe/Ni Bilayers on Cu(100)

2000 ◽  
Vol 648 ◽  
Author(s):  
B. Schirmer ◽  
X. Liu ◽  
M. Wuttig
Keyword(s):  
Magnetic Properties ◽  
Surface Layer ◽  
Molecular Beam Epitaxy ◽  
Exchange Coupling ◽  
Molecular Beam ◽  
Interface Layer ◽  
Temperature Dependent ◽  
Iron Films ◽  
Magnetic Phases ◽  
Rich Variety

AbstractUltrathin iron films grown on Cu(100) have been found to exhibit a rich variety of structural and magnetic phases. In the present work, Fe/Ni bilayers have been prepared by molecular beam epitaxy to explore novel magnetic phenomena introduced by the ferromagnetic (FM) Ni underlayer. Unusual properties have been observed by measuring the temperature dependent magnetic properties. For 5.3 ML Fe on 7 ML Ni, a temperature dependent exchange coupling in the Fe film has been observed between the FM surface layer and FM interface layer.

Magnetic properties and anomalous Hall effect in antiferromagnetic Mn3Sn films

2020 ◽  
pp. 412692
Author(s):  
Zhongping Zhao ◽  
Qi Guo ◽  
Fenghua Chen ◽  
Kewei Zhang ◽  
Yong Jiang
Keyword(s):  
Magnetic Properties ◽  
Hall Effect ◽  
Anomalous Hall Effect

scholarly journals Temperature dependent anomalous Hall effect in La–Ca–Mn–O films

2000 ◽  
Vol 87 (9) ◽  
pp. 5576-5578 ◽  
Author(s):  
Yeongkuo Lin ◽  
Dean J. Miller ◽  
J. S. Jiang ◽  
John Pearson ◽  
S. D. Bader
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Temperature Dependent

scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

scholarly journals Quantum anomalous Hall effect in metal-bis(dithiolene), magnetic properties, doping and interfacing graphene

2018 ◽  
Vol 20 (35) ◽  
pp. 22652-22659 ◽  
Author(s):  
F. Crasto de Lima ◽  
Gerson J. Ferreira ◽  
R. H. Miwa
Keyword(s):  
Magnetic Properties ◽  
Charge Transfer ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Quantum Anomalous Hall Effect ◽  
Metal Organic

Charge transfer between metal–organic Kagome lattices interfaced with graphene provides a tunable quantum anomalous Hall effect.

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