scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Simulations of molecular beam epitaxy growth of GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Zhang ◽  
B. G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
High Surface ◽  
Molecular Beam Epitaxy Growth ◽  
Smooth Surfaces ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Key Aspects

AbstractNumerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

scholarly journals Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3449
Author(s):  
Rodion R. Reznik ◽  
Konstantin P. Kotlyar ◽  
Vladislav O. Gridchin ◽  
Evgeniy V. Ubyivovk ◽  
Vladimir V. Federov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Mbe Growth ◽  
X Ray ◽  
Gaas Nanowires ◽  
The Way

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
A D Johnson ◽  
R Jefferies ◽  
G J Pryce ◽  
J A Beswick ◽  
T Ashley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Mbe Growth ◽  
Light Emitting ◽  
Dopant Incorporation ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTWe report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy

1997 ◽  
Vol 468 ◽  
Author(s):  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
S. M. Donovan ◽  
U. Hömmerich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Temperature Dependent ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Optical Activation ◽  
First Time ◽  
Temperature Dependent Photoluminescence

ABSTRACTMetalorganic molecular beam epitaxy has been utilized to incorporate Er into AlGaN materials during growth utilizing elemental and metalorganic sources. Room temperature 1.54 μm photoluminescence was observed from AlN:Er and GaN:Er. Photoluminescence from AlN:Er doped during growth using the elemental source was several times more intense than that observed from implanted material. For the first time, strong room temperature 1.54 μm PL was observed in GaN:Er grown on Si. Temperature-dependent photoluminescence experiments indicated the 1.54 μm intensities were reduced to 60% and 40% for AlN:Er and GaN:Er, respectively, between 15 K and 300 K. The low volatility of Er(III) tris (2,2,6,6 - tetramethyl heptanedionate) and temperature limitations imposed by transport considerations limited maximum doping levels to ∼1017 cm-3 indicating that this precursor is unsuitable for UHV.

The Nature of Electrically Inactive Implanted Arsenic in Silicon after Rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
John L. Altrip ◽  
Alan G.R. Evans ◽  
Nigel D. Young ◽  
John R. Logan
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Low Dose ◽  
Solubility Limit ◽  
High Dose ◽  
Temperature Dependent ◽  
Spreading Resistance ◽  
Hall Effect Measurements

AbstractThe electrical activation of As implanted Si has been investigated on rapid thermal annealing timescales using sheet resistance, spreading resistance and Hall Effect techniques. For high dose implants (>1015 As cm-2) differential Hall Effect and spreading resistance profiles confirm the existence of a temperature dependent electrical solubility limit. However for low dose implants, annealing schedules chosen such that the electrical solubility limit is not exceeded reveal electrical deactivation which is not accounted for in the clustering theory. Hall Effect measurements performed as a function of temperature have enabled us to reveal directly electrically inactive As which is not observable at room temperature using standard electrical techniques. The results indicate that As atoms in Si introduce deep trapping levels within the bandgap which are responsible forremoving As from the conduction process at room temperature. This temperature activated process is characterized with an activation energy of 0.4eV.

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