Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC
2007 ◽
Vol 556-557
◽
pp. 675-678
◽
Keyword(s):
Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250°C, oxides thermally-grown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.
2008 ◽
Vol 600-603
◽
pp. 1131-1134
◽
1985 ◽
Vol 20
(1)
◽
pp. 343-348
◽
Keyword(s):
1996 ◽
Vol 36
(10)
◽
pp. 1521-1523
◽
Keyword(s):
1985 ◽
Vol 32
(2)
◽
pp. 423-428
◽
Keyword(s):
2013 ◽
Vol 52
(3R)
◽
pp. 031301
◽