Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO2Film on Atomically Flat Si Surface

Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm. At 250°C, oxides thermally-grown using N2O with NO annealing achieve a mean time to failure (MTTF) of 2300 hours at 6 MV/cm. Oxides grown in steam with NO annealing show approximately four times longer MTTF than N2O-grown oxides. At electric fields greater than 8 MV/cm, Fowler-Nordheim tunneling significantly reduces the expected failure times. For this reason, extrapolation of mean-time to failure at low fields must be performed by datapoints measured at lower electric fields.

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Time-Dependent Dielectric Breakdown of Thin Thermally Grown SiO/sub 2/ Films

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.1985.1052312 ◽

1985 ◽

Vol 20 (1) ◽

pp. 343-348 ◽

Cited By ~ 17

Author(s):

K. Yamabe ◽

K. Taniguchi

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thermally Grown

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Time-dependent-dielectric breakdown of thin thermally grown SiO2films

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.21958 ◽

1985 ◽

Vol 32 (2) ◽

pp. 423-428 ◽

Cited By ~ 93

Author(s):

K. Yamabe ◽

K. Taniguchi

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Time Dependent Dielectric Breakdown ◽

Thermally Grown

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Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

MRS Proceedings ◽

10.1557/proc-766-e2.9 ◽

2003 ◽

Vol 766 ◽

Author(s):

Ahila Krishnamoorthy ◽

N.Y. Huang ◽

Shu-Yunn Chong

Keyword(s):

Dielectric Layer ◽

Dielectric Breakdown ◽

Copper Ions ◽

Dielectric Strength ◽

Time Dependent ◽

Breakdown Field ◽

Field Range ◽

Time Dependent Dielectric Breakdown ◽

Voltage Ramp ◽

Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

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