Abnormal Grain Growth Induced by Boundary Segregation of Solute Atoms

2007 ◽  
Vol 558-559 ◽  
pp. 1093-1099 ◽  
Author(s):  
Seong Gyoon Kim ◽  
Won Tae Kim ◽  
Yong Bum Park

Abnormal grain growth (AGG) proceeds in case that normal grain growth is inhibited. It has long been known that the inhibition involves finely dispersed particles and/or the development of specific textures. There is another strong obstacle against the grain boundary (GB) motion; the solute atoms can reduce their energy by moving from the bulk into a GB. Resultant interaction between the solute atoms and a GB makes the GB motion more difficult. However the role of the GB segregation effect on AGG has not been clarified. In this study we simulate the 2D and 3D grain growth accompanying boundary segregation of solute atoms by using a phase-field model. It is shown that the segregation plays an important role on the occurrence of AGG. The boundary-segregation-induced AGG can take place when the average driving force of grain growth approaches a critical condition for pinning-depinning transition in solute-drag atmosphere.

2011 ◽  
Vol 127 ◽  
pp. 89-94 ◽  
Author(s):  
Ye Chao Zhu ◽  
Jiong Hui Mao ◽  
Fa Tang Tan ◽  
Xue Liang Qiao

Low energy grain boundaries were considered to be important in abnormal grain growth by theoretical deduction. The disorientation angles and coincidence site lattice grain boundaries distribution of more than 20 Goss grains and their neighboring matrix grains in primary recrystallized Fe-3%Si alloy were investigated using an electron backscatter diffraction method. It was found that the frequency of low energy grain boundaries of Goss grains which are more likely to abnormally grow are higher than their neighboring matrix grains, which indicated that low energy grain boundaries play a dominant role in the abnormal grain growth of Fe-3%Si alloy. The result meets well with the abnormal grain growth theory.


2020 ◽  
Vol 30 (4) ◽  
pp. 510-516
Author(s):  
Shuiyuan Yang ◽  
Xinyu Qing ◽  
Jixun Zhang ◽  
Lipeng Guo ◽  
Shen Hong ◽  
...  

2006 ◽  
Vol 317-318 ◽  
pp. 1-6 ◽  
Author(s):  
Nicolas Louet ◽  
Thierry Epicier ◽  
Gilbert Fantozzi

The target of this work is to investigate the effect of small additions of SiO2 or CaO on the sintering behavior and the microstructure of an ultrapure α-alumina compound. The sintering behavior has been investigated through extensive dilatometric study. SiO2 additions lead to a significant decrease in shrinkage rate during the intermediate stage of sintering whereas CaO is beneficent to densification. It has been found that during this stage which corresponds to the maximum of densification rate, grain boundaries diffusion controls densification through oxygen vacancies. The study of the densification behavior under different atmospheres help us to explain the role of the additives in agreement with electroneutrality equations. S.E.M. investigations confirm the well know correlation between doping and heterogeneous microstructures. After doping with SiO2 or CaO, abnormal grain growth appears at temperatures corresponding to the lowest eutectics given by Al2O3-SiO2 or Al2O3-CaO phase diagrams. H.R.T.E.M. observations show that below the critical temperatures for abnormal grain growth, additives enrichment is observed near grain boundaries (GBs). Above these temperatures, glassy phase for SiO2-doping and calciumhexaluminate (CA6) for CaO-doping are present at grain boundaries.


2004 ◽  
Vol 467-470 ◽  
pp. 3-10 ◽  
Author(s):  
Mats Hillert

The historical development of the two approaches to the interaction between solute atoms and a migrating interface, based on dissipation of Gibbs energy and on solute drag, are reviewed and compared. In the way the solute drag was formulated long ago for recrystallization and grain growth, it does not apply to phase transformations. With a new solute drag equation, which was recently proposed, it turns out that the two approaches are completely equivalent for phase transformations as well as grain boundary migration.


1998 ◽  
Vol 21 (1-4) ◽  
pp. 419-428 ◽  
Author(s):  
Choelhwyi Bae ◽  
Jeon-Kook Lee ◽  
Si-Hyung Lee ◽  
Yoon Baek Park ◽  
Hyung-Jin Jung

2018 ◽  
Vol 146 ◽  
pp. 204-208 ◽  
Author(s):  
Hyung-Ki Park ◽  
Chan-Hee Han ◽  
Chang-Soo Park ◽  
Jong-Tae Park ◽  
Hyung-Don Joo

Sign in / Sign up

Export Citation Format

Share Document