Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
2009 ◽
Vol 615-617
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pp. 287-290
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Keyword(s):
Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer level. Lifetimes measured in presence and absence of the p+ layer show lower lifetime values with p+ layer present. This is attributed to high recombination rate at p+/n- interface. Lifetimes at various buffer thicknesses show lower values at the buffer layer of about 50 m due to high interface recombination rate resulting from rougher surface of the buffer layer. Lifetimes of PiN wafers from interrupted and continuous p+/n- growth are very comparable.
1998 ◽
Vol 264-268
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pp. 525-528
1993 ◽
Vol 32
(Part 2, No. 9B)
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pp. L1362-L1364
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2016 ◽
Vol 136
(10)
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pp. 437-442
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2018 ◽
Vol 924
◽
pp. 269-272
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