Morphological Character and Statistical Property of Random Surface of ZnO Thin Film Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1159-1162
Author(s):  
Ning Yu Zhang ◽  
Qing Song Huo ◽  
Li Xin Han ◽  
Gang Fu ◽  
Jun Qing Zhao ◽  
...  

A method for characterizing the morphology property of ZnO film surface with Gaussian correlation is investigated. The parameters of root-mean-square roughness w and lateral correlation lengthξare introduced in Gaussian model to describe the correlation properties of the random film surfaces. In the experimental performance, ZnO thin films are grown on quartz glass and silicon substrates by the reactive radio-frequency magnetron sputtering method under different deposition pressure. The surface morphologies of the film surface are scanned by an atomic force microscopy. The height auto-correlation functions and root-mean-square roughness are obtained by using the numerical calculus method. Carried on the fitting with the Gaussian function to the height auto-correlation function data, the lateral correlation lengths are extracted to describe the statistical properties of ZnO thin film in mathematics with other parameters.

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.


1982 ◽  
Vol 25 (4) ◽  
pp. 2315-2323 ◽  
Author(s):  
G. Rasigni ◽  
F. Varnier ◽  
M. Rasigni ◽  
J. P. Palmari ◽  
A. Llebaria

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .


2008 ◽  
Vol 33 (2) ◽  
pp. 173-189 ◽  
Author(s):  
W. James Stemp ◽  
Ben E. Childs ◽  
Samuel Vionnet ◽  
Christopher A. Brown

Sign in / Sign up

Export Citation Format

Share Document