600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

2011 ◽  
Vol 679-680 ◽  
pp. 714-717
Author(s):  
Yu Zhu Li ◽  
Wei Jiang Ni ◽  
Zhe Yang Li ◽  
Yun Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
State Power ◽  
Loss Reduction ◽  
Chip Area ◽  
Turn On ◽  
Igbt Module ◽  
Hybrid Module ◽  
Device Technology

600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

2010 ◽  
Vol 645-648 ◽  
pp. 1127-1130 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kazutoshi Ogawa ◽  
Norihumi Kameshiro ◽  
Hidekatsu Onose ◽  
Masahiro Nagasu
Keyword(s):  
Energy Loss ◽  
Power Loss ◽  
High Speed ◽  
Loss Reduction ◽  
Forward Voltage ◽  
Turn On ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Hybrid Module ◽  
Drive Circuit

We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a 3kV/200A hybrid module, equipped with Si-IGBTs and SiC-JBS diodes. We attempted to decrease the recovery loss, and the decrease in the turn-on power loss, by using a hybrid module and a high-speed drive circuit. Moreover, we estimated that the total energy loss of the converter and the inverter were reduced to about 33%.

scholarly journals Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

2021 ◽  
Author(s):  
Kemeng Yang ◽  
Jie Wei ◽  
Kaiwei Dai ◽  
Zhen Ma ◽  
Congcong Li ◽  
...  
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
Dynamic Performance ◽  
Reverse Current ◽  
Turn On ◽  
Current Path ◽  
Anode Electrode ◽  
Recovery Characteristic ◽  
A Current ◽  
Electron Extraction

Abstract A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P+ anode electrode of RC-LIGBT and the other side is connected to the N+ anode via a floating ohmic contact. The adaptively turn-on/off of the ISM contributes to improve the static and dynamic performance of the ISM RC-LIGBT. In the forward-state, due to the off-state of the ISM, the snapback could be effectively suppressed without requiring extra device area compared with the SSA (separated shorted anode) and STA (segmented trenches in the anode) LIGBTs. In the reverse conduction, the ISM is turned on and the parasitic NPN in the ISM is punched through, which provides a current path for the reverse current. Meanwhile, during the turn-off and reverse recovery states, the ISM turns on, providing a rapid electron extraction path. Thus, a superior tradeoff between the on-state voltage drop (Von) and turnoff loss (Eoff) as well as an improved reverse recovery characteristic can be obtained. Compared with the STA device, the proposed ISM RC-LIGBT reduces Eoff by 21.5% without snapback. Its reverse recovery charge is reduced by 53.7%/58.6% compared to that of the SSA LIGBT with Lb=40/60μm at the same Von. Due to the prominent static and dynamic characteristic, the power loss of ISM RC-LIGBT in a completed switching cycle is reduced.

Application of 1200V-8A SiC JBS Diodes in the Motor System

2013 ◽  
Vol 347-350 ◽  
pp. 1530-1534
Author(s):  
Ao Liu ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Wei Feng Sun
Keyword(s):  
High Frequency ◽  
Motor System ◽  
High Efficiency ◽  
Loss Reduction ◽  
Turn On ◽  
Device Technology

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency.

EXPERIMENTAL STATIC AND DYNAMIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS FOR RESISTIVE LOADS

1995 ◽  
Vol 05 (03) ◽  
pp. 393-410
Author(s):  
MARIAN K. KAZIMIERCZUK ◽  
NANDAKUMAR THIRUNARAYAN ◽  
BICK T. NGUYEN ◽  
JOSEPH A. WEIMER
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
Cathode Voltage ◽  
Switching Power ◽  
Turn On ◽  
Curve Tracer ◽  
Resistive Loading ◽  
Different Temperatures ◽  
Forward Voltage Drop ◽  
Resistive Loads

Experimental results are given for a PMOS-controlled thyristor (PMCT). The static IA-VAK characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage VAK at different temperatures. The characteristics are similar to the ID-VD characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. VF(AK) = 1.6 V at IA = 200 A . The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current iA, gate current iG, anode-to-cathode voltage vAK, and gate-to-anode drive voltage vGA were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 μs and the measured turn-off time was 2.2 μs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.

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