scholarly journals Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

2021 ◽  
Author(s):  
Kemeng Yang ◽  
Jie Wei ◽  
Kaiwei Dai ◽  
Zhen Ma ◽  
Congcong Li ◽  
...  
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
Dynamic Performance ◽  
Reverse Current ◽  
Turn On ◽  
Current Path ◽  
Anode Electrode ◽  
Recovery Characteristic ◽  
A Current ◽  
Electron Extraction

Abstract A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P+ anode electrode of RC-LIGBT and the other side is connected to the N+ anode via a floating ohmic contact. The adaptively turn-on/off of the ISM contributes to improve the static and dynamic performance of the ISM RC-LIGBT. In the forward-state, due to the off-state of the ISM, the snapback could be effectively suppressed without requiring extra device area compared with the SSA (separated shorted anode) and STA (segmented trenches in the anode) LIGBTs. In the reverse conduction, the ISM is turned on and the parasitic NPN in the ISM is punched through, which provides a current path for the reverse current. Meanwhile, during the turn-off and reverse recovery states, the ISM turns on, providing a rapid electron extraction path. Thus, a superior tradeoff between the on-state voltage drop (Von) and turnoff loss (Eoff) as well as an improved reverse recovery characteristic can be obtained. Compared with the STA device, the proposed ISM RC-LIGBT reduces Eoff by 21.5% without snapback. Its reverse recovery charge is reduced by 53.7%/58.6% compared to that of the SSA LIGBT with Lb=40/60μm at the same Von. Due to the prominent static and dynamic characteristic, the power loss of ISM RC-LIGBT in a completed switching cycle is reduced.

Temperature Dependence and Current Transport Mechanisms in AlxGa1−xN Schottky Rectifiers

2000 ◽  
Vol 622 ◽  
Author(s):  
A.P. Zhang ◽  
X.A. Cao ◽  
G. Dang ◽  
F. Ren ◽  
J. Han ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Reverse Current ◽  
Negative Temperature ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Edge Termination ◽  
Turn On ◽  
Schottky Rectifiers ◽  
Moderate Bias ◽  
A Current

ABSTRACTGaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of −6.0 ± 0.4 V·K−1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·Cm−2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 0.13 Δcm2 for GaN and 2.3 Δcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.Cm−2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
Y. Gao ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Turn On ◽  
Current Voltage ◽  
Forward Voltage Drop ◽  
P Type ◽  
State Resistance

ABSTRACTForward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

EXPERIMENTAL STATIC AND DYNAMIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS FOR RESISTIVE LOADS

1995 ◽  
Vol 05 (03) ◽  
pp. 393-410
Author(s):  
MARIAN K. KAZIMIERCZUK ◽  
NANDAKUMAR THIRUNARAYAN ◽  
BICK T. NGUYEN ◽  
JOSEPH A. WEIMER
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
Cathode Voltage ◽  
Switching Power ◽  
Turn On ◽  
Curve Tracer ◽  
Resistive Loading ◽  
Different Temperatures ◽  
Forward Voltage Drop ◽  
Resistive Loads

Experimental results are given for a PMOS-controlled thyristor (PMCT). The static IA-VAK characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage VAK at different temperatures. The characteristics are similar to the ID-VD characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. VF(AK) = 1.6 V at IA = 200 A . The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current iA, gate current iG, anode-to-cathode voltage vAK, and gate-to-anode drive voltage vGA were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 μs and the measured turn-off time was 2.2 μs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.

600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

2011 ◽  
Vol 679-680 ◽  
pp. 714-717
Author(s):  
Yu Zhu Li ◽  
Wei Jiang Ni ◽  
Zhe Yang Li ◽  
Yun Li ◽  
Chen Chen ◽  
...  
Keyword(s):  
Power Loss ◽  
Voltage Drop ◽  
State Power ◽  
Loss Reduction ◽  
Chip Area ◽  
Turn On ◽  
Igbt Module ◽  
Hybrid Module ◽  
Device Technology

600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

Critical Current of Bi-2212 Single Crystal by Doping Oxides as a Pinning Center

2014 ◽  
Vol 95 ◽  
pp. 175-180
Author(s):  
Takuya Agou ◽  
Hiroya Imao
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Single Crystals ◽  
Crystal Surface ◽  
Rare Earth Oxides ◽  
Pinning Centers ◽  
Current Path ◽  
Pinning Center ◽  
Superconducting Current ◽  
A Current

It is necessary to formpinning centers in superconductors to allow the flow of large currents throughthe specimens. To clarify the properties of pinning centers, it is preferableto investigate single crystals. In this study, heat treatment was used to dopevarious oxides into Bi2Sr2CaCu2Ox(Bi-2212) single crystals prepared by self-flux methods and the criticalcurrent (Ic) was measured. The oxides used in this study were Al2O3and the rare earth oxides Er2O3and Nd2O3. At 77K, Nd2O3and Er2O3 are magnetic, whereas Al2O3is nonmagnetic. The Ic of the samples were measured as a current per width of 1cm (Ics). The resulting Ics of the Bi-2212 single crystal was 2.8A/cm and thatof the Al2O3 doped Bi-2212 sample was 4.5A/cm. Comparedwith these samples, doping the other rare earth oxides gave Ics values inexcess 10A/cm. The results indicated that the doping oxides were effective inoperating as pinning centers in the samples. We assumed the current path in asingle crystal, and calculated the Ics by superconducting current simulation.The results indicated that the oxides permeated from a crystal surface in aporous shape. The oxides increase the current which flow in the Cu-O2planes that are parallel to the a-b plane.

scholarly journals Integrated Anode Electrode Composited Cu–Sn Alloy and Separator for Microscale Lithium Ion Batteries

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 603 ◽  
Author(s):  
Yuxia Liu ◽  
Kai Jiang ◽  
Shuting Yang
Keyword(s):  
Current Density ◽  
Active Material ◽  
Specific Capacity ◽  
Lithium Ion ◽  
Cycle Performance ◽  
Electrode Structure ◽  
Microelectronic Devices ◽  
Anode Electrode ◽  
Integrated Anode ◽  
A Current

A novel integrated electrode structure was designed and synthesized by direct electrodepositing of Cu–Sn alloy anode materials on the Celgard 2400 separator (Cel-CS electrode). The integrated structure of the Cel-CS electrode not only greatly simplifies the battery fabrication process and increases the energy density of the whole electrode, but also buffers the mechanical stress caused by volume expansion of Cu–Sn alloy active material; thus, effectively preventing active material falling off from the substrate and improving the cycle stability of the electrode. The Cel-CS electrode exhibits excellent cycle performance and superior rate performance. A capacity of 728 mA·h·g−1 can be achieved after 250 cycles at the current density of 100 mA·g−1. Even cycled at a current density of 5 A·g−1 for 650 cycles, the Cel-CS electrode maintained a specific capacity of 938 mA·h·g−1, which illustrates the potential application prospects of the Cel-CS electrode in microelectronic devices and systems.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

scholarly journals OPTIMASI PENEMPATAN KAPASITOR BANK UNTUK PERBAIKAN RUGI DAYA PADA PENYULANG SABA MENGGUNAKAN ALGORITMA GENETIKA

2019 ◽  
Vol 6 (2) ◽  
pp. 7
Author(s):  
I. K. A. Wijaya ◽  
R. S. Hartati ◽  
I W. Sukerayasa
Keyword(s):  
Genetic Algorithms ◽  
Power Loss ◽  
Voltage Drop ◽  
Electrical Energy ◽  
Total Power ◽  
Network Reconfiguration ◽  
Power Losses ◽  
Combined Method ◽  
Capacitor Banks ◽  
Distribution Transformers

Saba feeder is a feeder who supplies 78 distribution transformers with feeder length 38,959 kms, through this Saba feeder electrical energy is channeled radially to each distribution substation. In 2017 the voltage shrinkage at Saba feeder was 9.88% (18,024 kV) while the total power loss was 445.5 kW. In this study an attempt was made to overcome the voltage losses and power losses using the method of optimizing bank capacitors with genetic algorithms and network reconfiguration. The best solution obtained from this study will be selected for repair of voltage losses and power losses in Saba feeders. The results showed that by optimizing bank capacitors using genetic algorithms, the placement of capacitor banks was placed on bus 23 (the channel leading to the BB0024 transformer) and successfully reduced the power loss to 331.7 kW. The network reconfiguration succeeded in fixing the voltage on the Saba feeder with a voltage drop of 4.75% and a total power loss of 182.7 kW. With the combined method, reconfiguration and optimization of bank capacitors with genetic algorithms were obtained on bus 27 (channel to transformer BB0047) and managed to reduce power losses to 143 kW.

Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current

2020 ◽  
Vol 169 ◽  
pp. 107807
Author(s):  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Hong Zhou ◽  
Tao Zhang ◽  
Haiyong Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Current ◽  
Turn On ◽  
Tungsten Anode

MODELING AND DYNAMIC ANALYSIS OF RECONFIGURABLE ROBOTIC GRIPPER SYSTEM FOR HANDLING FABRIC MATERIALS IN GARMENT INDUSTRIES

2006 ◽  
Vol 05 (02) ◽  
pp. 233-254 ◽  
Author(s):  
S. RAGUNATHAN ◽  
L. KARUNAMOORTHY
Keyword(s):  
Dynamic Analysis ◽  
Dynamic Performance ◽  
Simulation Software ◽  
Worst Case ◽  
Pneumatic Actuators ◽  
Adams Simulation ◽  
Suction Cups ◽  
Limp Materials ◽  
Fabric Materials ◽  
A Current

A reconfigurable robotic gripper based on pneumatic technology has been designed and developed for grasping fabric materials in garment industries automation. The design is based on reconfigurable multidegree of freedom, which can manipulate single and multiple panels of limp materials. The design consist of four arms initially in a cross bar configuration, hosting four suction cups mounted on each of the arms. The design assures low inertia, high modularity and full flexibility adapting to the picking of limp materials in garment and shoe industries. The simulation referring to a worst-case operative cycle has been performed in the environment of a current industrial layout. The kinematic and dynamic performance of the gripper system is analyzed in ADAMS simulation software and the results are presented. The architecture of the gripper is simple and the choice of pneumatic actuators improves the reliability of the system.

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