Molecular Dynamics Simulation of Al2O3-SiC Interface
2011 ◽
Vol 697-698
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pp. 192-197
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Keyword(s):
The interfacial energy and diffusion phenomenon of the Al2O3(012)-SiC (011) interface model are studied based on molecular dynamics. The interfacial energy increases firstly until reaches its maximum 0.459J/m2at the temperature of 1500K and then decreases. The relationship of diffusion coefficients for each kind of atoms is C>Si>O>Al. Diffusion coefficients of atoms increase at first and then decrease as the temperature goes up. This indicates the diffusion mechanism has been changed during the temperature rising process.
2020 ◽
Vol 1506
◽
pp. 012019
2010 ◽
Vol 17
(11)
◽
pp. 1403-1411
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2014 ◽
Vol 33
(8)
◽
pp. 1756-1779
◽
2015 ◽
Vol 113
(9-10)
◽
pp. 1124-1136
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Keyword(s):