Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry
2014 ◽
Vol 778-780
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pp. 1185-1188
Keyword(s):
This work reports on the characterization of the decomposition of GaN layers epitaxied on c-plane Sapphire substrate by Differential Scanning Calorimetry. Many configurations have been characterized from two different GaN epilayer providers with a large range of doping concentrations from Non-intentionally Doped layers up to 2x1019cm-3. All intentionally doped layers exhibit an endothermic reaction starting at 200-300 °C while the NiD layer thermogram is the same as the blank experiment. XPS and SEM observations demonstrated that the endothermic reaction is related to the GaN decomposition through Threading Dislocation and nanoPipe.
2000 ◽
Vol 348
(1-2)
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pp. 147-159
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2019 ◽
Vol 6
(1)
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pp. 71-84
2013 ◽
Vol 2013
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pp. 1-6
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1989 ◽
Vol 23
(1)
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pp. 63-74
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Keyword(s):