Low temperature transmission electron microscopy and differential scanning calorimetry characterization of latexes stabilized with surface active block oligomers

Polymer ◽  
1992 ◽  
Vol 33 (10) ◽  
pp. 2043-2050 ◽  
Author(s):  
Adriana Haas-Bar Iian ◽  
Isao Noda ◽  
Lee A. Schechtman ◽  
Yeshayahu Talmon
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Low Temperature ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Surface Active ◽  
Active Block

Low-temperature instability of Ti2SnC: A combined transmission electron microscopy, differential scanning calorimetry, and x-ray diffraction investigations

2009 ◽  
Vol 24 (1) ◽  
pp. 39-49 ◽  
Author(s):  
J. Zhang ◽  
B. Liu ◽  
J.Y. Wang ◽  
Y.C. Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Low Temperature ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Temperature Instability ◽  
X Ray ◽  
Transmission Electron ◽  
Ceramic Microstructure

Transmission electron microscopy (TEM), differential scanning calorimetry (DSC), and x-ray diffraction (XRD) investigations were conducted on the hot-pressed Ti2SnC bulk ceramic. Microstructure features of bulk Ti2SnC ceramic were characterized by using TEM, and a needle-shaped β-Sn precipitation was observed inside Ti2SnC grains with the orientation relationship: (0001) Ti2SnC // (200) Sn and Ti2SnC // [001] Sn. With the combination of DSC and XRD analyses, the precipitation of metallic Sn was demonstrated to be a thermal stress-induced process during the cooling procedure. The reheating temperature, even as low as 400 °C, could trigger the precipitation of Sn from Ti2SnC, which indicated the low-temperature instability of Ti2SnC. A substoichiometry Ti2SnxC formed after depletion of Sn from ternary Ti2SnC phase. Under electron beam irradiation, metallic Sn was observed diffusing back into Ti2SnxC. Furthermore, a new Ti7SnC6 phase with the lattice constants of a = 0.32 and c = 4.1 nm was identified and added in the Ti-Sn-C ternary system.

scholarly journals Preparation and characterization of baicalein loaded phytosomes: Assessment of in vitro parameters

2020 ◽  
Vol 12 (4) ◽  
pp. 22-29
Author(s):  
KanchanV Zade ◽  
Alok Pal Jain
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Herbal Extracts ◽  
Scanning Calorimetry ◽  
Reverse Phase ◽  
Tem Analysis ◽  
Transmission Electron

Phytosome is a complex between natural active ingredient and a phospholipid. Further, phytosomes been applied to many popular herbal extracts or active molecules for augmenting oral dissolution. Therefore, in present investigation, orally administered Baicalein, atype of flavanoids, is poorly absorbed, and shows suboptimal dissolution. The phytosomes encapsulating baicalein (1:1 Mm) were prepared by reverse phase evaporation method followed by lyophilization. Transmission electron microscopy (TEM) analysis revealed that phytosomes were almost spherical in shape with particle size below 100 nm. The Powder ex-ray diffraction (PXRD) and differential scanning calorimetry (DSC) demonstrated that Baicalein loaded phytosomes were amorphous in nature. Amorphization of therapeutic moiety leads to improvement in dissolution. In conclusion, epigallocatechin loaded phytosomes exhibited promising results and warrant further in vitro andin vivo investigations under a set of stringent parameters for transforming in to a clinically viable products.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Reactions in Metal-Metalloid Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Reactive Systems ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Compound Formation ◽  
Transmission Electron

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.

Crystallization of Amorphous Si In Al/Si Multilayers

1991 ◽  
Vol 230 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Layered Structure ◽  
Heat Of Reaction ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
Amorphous Si

AbstractThe crystallization of amorphous Si in a Al/Si multilayer (with a modulation length of about 120Å) was investigated using transmission electron microscopy, differential scanning calorimetry and X-ray diffraction. Amorphous Si was found to crystallize at about 175 °C with the heat of reaction of 11±2(kJ/mol). Al grains grow prior to the nucleation of crystalline Si. The crystalline Si was found to nucleate within the grown Al layers. The incipient crystalline Si initially grows within the Al layer and then spreads through the amorphous Si and other Al layers. Because of extensive intermixing, the original layered structure is destroyed. The Al(111) texture is also enhanced.

scholarly journals Combined effect of Sn addition and pre-ageing on natural secondary and artificial ageing of Al–Mg–Si alloys

2022 ◽  
Author(s):  
Xingpu Zhang ◽  
Meng Liu ◽  
Jiangwei Wang ◽  
Jixue Li ◽  
John Banhart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Electrical Resistivity ◽  
Combined Effect ◽  
Artificial Ageing ◽  
Combined Effects ◽  
Natural Ageing ◽  
Scanning Calorimetry ◽  
Transmission Electron

AbstractBoth Sn addition and pre-ageing are known to be effective in maintaining the artificial ageing potential after natural ageing of Al–Mg–Si alloys. In this study, the combined effects of Sn addition and pre-ageing at 100 °C or 180 °C on natural secondary ageing and subsequent artificial ageing of an alloy AA6014 were investigated using hardness, electrical resistivity, differential scanning calorimetry and transmission electron microscopy characterizations. It is found that pre-ageing can suppress natural secondary ageing and improve the artificial ageing hardening kinetics and response after 1 week of natural secondary ageing in both alloys with and without Sn addition. The effect of pre-ageing at 100 °C is more pronounced in the Sn-free alloy while the combination of pre-ageing at 180 °C and adding Sn shows superiority in suppressing natural secondary ageing and thus avoiding the undesired hardening before artificial ageing. Moreover, when natural ageing steps up to 8 h are applied before pre-ageing at 100 °C, the effect of pre-ageing in Sn-added alloy can be further improved. The influence of Sn on vacancies at different ageing temperatures is discussed to explain the observed phenomena. Graphical abstract

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