Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

2015 ◽  
Vol 821-823 ◽  
pp. 553-556 ◽  
Author(s):  
Dairi Yajima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Gas Transport ◽  
Etching Rate ◽  
Outer Region ◽  
Gas Distribution ◽  
Rate Distribution ◽  
Gas Distributor ◽  
Center Region

A SiC dry etcher using chlorine trifluoride (ClF3) gas was evaluated, particularly about the etching rate distribution. At 100%, the etching rate was high in the center region and was low in the outer region. However, that at 20% showed the opposite profile. This difference was considered to be due to the chlorine trifluoride gas distribution which was built above the gas distributor.

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

2017 ◽  
Vol 897 ◽  
pp. 383-386 ◽  
Author(s):  
Ken Nakagomi ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Gas Transport ◽  
Etching Rate ◽  
Gas Distributor ◽  
Polycrystalline Silicon Carbide ◽  
Rate Profile ◽  
Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

scholarly journals 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

2018 ◽  
Vol 924 ◽  
pp. 369-372 ◽  
Author(s):  
Shogo Okuyama ◽  
Keisuke Kurashima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Concentric Circle ◽  
Wafer Surface ◽  
Deep Etching ◽  
Gas Distributor ◽  
High Etching Rate ◽  
Hole Arrays ◽  
Rate Profile ◽  
Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

2019 ◽  
Vol 963 ◽  
pp. 520-524
Author(s):  
Keisuke Kurashima ◽  
Ryohei Kawasaki ◽  
Kenta Irikura ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Numerical Calculation ◽  
Transport Phenomena ◽  
Etching Rate ◽  
Single Crystalline ◽  
Gas Distributor ◽  
Rate Profile ◽  
Sic Wafer

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF3 gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

scholarly journals Dry etching of silicon carbide in ICP with high anisotropy and etching rate

2020 ◽  
Vol 862 ◽  
pp. 022039
Author(s):  
A A Osipov ◽  
A B Speshilova ◽  
E V Endiiarova ◽  
A A Osipov ◽  
S E Alexandrov
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Dry Etching ◽  
High Anisotropy

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

2014 ◽  
Vol 778-780 ◽  
pp. 738-741 ◽  
Author(s):  
Dairi Yajima ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Substrate Surface ◽  
Etching Rate ◽  
Numerical Calculations ◽  
Total Flow ◽  
Total Flow Rate ◽  
Gas Concentration ◽  
Rate Profile

A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

2015 ◽  
Vol 821-823 ◽  
pp. 537-540
Author(s):  
Ai Isohashi ◽  
Yasuhisa Sano ◽  
Tomohisa Kato ◽  
Kazuto Yamauchi
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Etching Rate ◽  
Wafer Surface ◽  
Sic Wafer

Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this paper, CARE was applied to the planarization of 6-inch silicon carbide (SiC) wafers, and removal properties were investigated. The etching rate was about 20nm/h, which is almost equal to that of 2-inch SiC wafer (16 nm/h). The rms roughness was reduced along with the removal depth, and step-terrace structure was observed in whole area of the on-axis wafer surface.

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer

2020 ◽  
Vol 1004 ◽  
pp. 167-172
Author(s):  
Ryohei Kawasaki ◽  
Kenta Irikura ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Fluid Dynamics ◽  
Molecular Weight ◽  
Computational Fluid Dynamics ◽  
Silicon Carbide ◽  
Large Diameter ◽  
Wafer Surface ◽  
Power Devices ◽  
Gas Distributor ◽  
Large Molecular Weight ◽  
Heavy Gas

For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer surface.

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