A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

2017 ◽  
Vol 897 ◽  
pp. 383-386 ◽  
Author(s):  
Ken Nakagomi ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Gas Transport ◽  
Etching Rate ◽  
Gas Distributor ◽  
Polycrystalline Silicon Carbide ◽  
Rate Profile ◽  
Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

2019 ◽  
Vol 963 ◽  
pp. 520-524
Author(s):  
Keisuke Kurashima ◽  
Ryohei Kawasaki ◽  
Kenta Irikura ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Numerical Calculation ◽  
Transport Phenomena ◽  
Etching Rate ◽  
Single Crystalline ◽  
Gas Distributor ◽  
Rate Profile ◽  
Sic Wafer

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF3 gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

scholarly journals 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

2018 ◽  
Vol 924 ◽  
pp. 369-372 ◽  
Author(s):  
Shogo Okuyama ◽  
Keisuke Kurashima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Concentric Circle ◽  
Wafer Surface ◽  
Deep Etching ◽  
Gas Distributor ◽  
High Etching Rate ◽  
Hole Arrays ◽  
Rate Profile ◽  
Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

2015 ◽  
Vol 821-823 ◽  
pp. 553-556 ◽  
Author(s):  
Dairi Yajima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Gas Transport ◽  
Etching Rate ◽  
Outer Region ◽  
Gas Distribution ◽  
Rate Distribution ◽  
Gas Distributor ◽  
Center Region

A SiC dry etcher using chlorine trifluoride (ClF3) gas was evaluated, particularly about the etching rate distribution. At 100%, the etching rate was high in the center region and was low in the outer region. However, that at 20% showed the opposite profile. This difference was considered to be due to the chlorine trifluoride gas distribution which was built above the gas distributor.

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

2020 ◽  
Vol 1004 ◽  
pp. 173-179
Author(s):  
Kenta Irikura ◽  
Ryohei Kawasaki ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Etching Rate ◽  
Gas Flow Rate ◽  
Etching Depth ◽  
Gas Concentration ◽  
Gas Distributor ◽  
Rate Profile ◽  
Wafer Thinning ◽  
Sic Wafer

A 50-mm diameter silicon carbide wafer thinning technique by means of a chemical reaction using a chlorine trifluoride (ClF3) gas was studied accounting for the gas distributor design and the total gas flow rate. The entire etching depth profile could become uniform with the increasing total gas flow rate at the fixed chlorine trifluoride gas concentration. A relationship between the pinhole arrangement of the gas distributor and the local etching rate profile was clarified by comparing the quick calculation and the measurement.

Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

2010 ◽  
Vol 97 (26) ◽  
pp. 262107 ◽  
Author(s):  
F. Liu ◽  
B. Hsia ◽  
C. Carraro ◽  
A. P. Pisano ◽  
R. Maboudian
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Pressure dependence of thin polycrystalline silicon carbide diaphragm resonators

2012 ◽  
Author(s):  
Andrew C. Barnes ◽  
Jaesung Lee ◽  
Patrick T. Rawlinson ◽  
Philip X.-L. Feng ◽  
Christian A. Zorman
Keyword(s):  
Silicon Carbide ◽  
Pressure Dependence ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Thin Polycrystalline

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation
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