Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF3 gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

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A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.383 ◽

2017 ◽

Vol 897 ◽

pp. 383-386 ◽

Cited By ~ 3

Author(s):

Ken Nakagomi ◽

Shogo Okuyama ◽

Hitoshi Habuka ◽

Yoshinao Takahashi ◽

Tomohisa Kato

Keyword(s):

Silicon Carbide ◽

Polycrystalline Silicon ◽

Gas Transport ◽

Etching Rate ◽

Gas Distributor ◽

Polycrystalline Silicon Carbide ◽

Rate Profile ◽

Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

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4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.369 ◽

2018 ◽

Vol 924 ◽

pp. 369-372 ◽

Cited By ~ 1

Author(s):

Shogo Okuyama ◽

Keisuke Kurashima ◽

Ken Nakagomi ◽

Hitoshi Habuka ◽

Yoshinao Takahashi ◽

...

Keyword(s):

Silicon Carbide ◽

Etching Rate ◽

Concentric Circle ◽

Wafer Surface ◽

Deep Etching ◽

Gas Distributor ◽

High Etching Rate ◽

Hole Arrays ◽

Rate Profile ◽

Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

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Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.173 ◽

2020 ◽

Vol 1004 ◽

pp. 173-179

Author(s):

Kenta Irikura ◽

Ryohei Kawasaki ◽

Hitoshi Habuka ◽

Yoshinao Takahashi ◽

Tomohisa Kato

Keyword(s):

Flow Rate ◽

Gas Flow ◽

Etching Rate ◽

Gas Flow Rate ◽

Etching Depth ◽

Gas Concentration ◽

Gas Distributor ◽

Rate Profile ◽

Wafer Thinning ◽

Sic Wafer

A 50-mm diameter silicon carbide wafer thinning technique by means of a chemical reaction using a chlorine trifluoride (ClF3) gas was studied accounting for the gas distributor design and the total gas flow rate. The entire etching depth profile could become uniform with the increasing total gas flow rate at the fixed chlorine trifluoride gas concentration. A relationship between the pinhole arrangement of the gas distributor and the local etching rate profile was clarified by comparing the quick calculation and the measurement.

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Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.738 ◽

2014 ◽

Vol 778-780 ◽

pp. 738-741 ◽

Cited By ~ 7

Author(s):

Dairi Yajima ◽

Hitoshi Habuka ◽

Tomohisa Kato

Keyword(s):

Silicon Carbide ◽

Substrate Temperature ◽

Flow Rate ◽

Substrate Surface ◽

Etching Rate ◽

Numerical Calculations ◽

Total Flow ◽

Total Flow Rate ◽

Gas Concentration ◽

Rate Profile

A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.

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Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.553 ◽

2015 ◽

Vol 821-823 ◽

pp. 553-556 ◽

Cited By ~ 8

Author(s):

Dairi Yajima ◽

Ken Nakagomi ◽

Hitoshi Habuka ◽

Tomohisa Kato

Keyword(s):

Silicon Carbide ◽

Gas Transport ◽

Etching Rate ◽

Outer Region ◽

Gas Distribution ◽

Rate Distribution ◽

Gas Distributor ◽

Center Region

A SiC dry etcher using chlorine trifluoride (ClF3) gas was evaluated, particularly about the etching rate distribution. At 100%, the etching rate was high in the center region and was low in the outer region. However, that at 20% showed the opposite profile. This difference was considered to be due to the chlorine trifluoride gas distribution which was built above the gas distributor.

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Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.537 ◽

2015 ◽

Vol 821-823 ◽

pp. 537-540

Author(s):

Ai Isohashi ◽

Yasuhisa Sano ◽

Tomohisa Kato ◽

Kazuto Yamauchi

Keyword(s):

Silicon Carbide ◽

Chemical Etching ◽

Etching Rate ◽

Wafer Surface ◽

Sic Wafer

Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this paper, CARE was applied to the planarization of 6-inch silicon carbide (SiC) wafers, and removal properties were investigated. The etching rate was about 20nm/h, which is almost equal to that of 2-inch SiC wafer (16 nm/h). The rms roughness was reduced along with the removal depth, and step-terrace structure was observed in whole area of the on-axis wafer surface.

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Methods of Numerically Analyzing and Visually Measuring Transport Phenomena in Chemical Equipment. Acceleration of Numerical Calculation of Fluid Flow and Heat Transfer by Preconditioning Iterative Method.

KAGAKU KOGAKU RONBUNSHU ◽

10.1252/kakoronbunshu.27.547 ◽

2001 ◽

Vol 27 (5) ◽

pp. 547-553 ◽

Cited By ~ 1

Author(s):

Hiroyuki Hirano ◽

Hiroshi Niki ◽

Toshiyuki Kohno ◽

Naotaka Okamoto

Keyword(s):

Heat Transfer ◽

Fluid Flow ◽

Numerical Calculation ◽

Iterative Method ◽

Transport Phenomena ◽

Chemical Equipment ◽

Flow And Heat Transfer

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A Complete System Modelling of Piezoelectric Energy Harvester (PEH) with Silicon Carbide (SiC) Used as Cantilever Base

Jurnal Teknologi ◽

10.11113/jt.v69.3295 ◽

2014 ◽

Vol 69 (8) ◽

Author(s):

Mohd Nor Fakhzan Mohd Kazim ◽

Selvanayakan Raman ◽

Muhammad Hafiz Shafie ◽

Nashrul Fazli Mohd Nasir ◽

Asan Gani Abdul Muthalif

Keyword(s):

Silicon Carbide ◽

Output Power ◽

Energy Harvester ◽

Damping Ratio ◽

Electrical Energy ◽

System Modelling ◽

Electronic Circuitry ◽

Piezo Element ◽

Piezoelectric Energy ◽

Sic Wafer

Silicon carbide (SiC) is a material that possesses hardness and robustness to operate under high temperature condition. This work is a pilot in exploring the feasibility of cubic piezo element on the SiC wafer with integrated proof mass as horizontal cantilever with perpendicular displacement with respect to the normal plane. With the advance of electronic circuitry, the power consumption is reduced to nano-watts. Therefore, harvesting ambient energy and converting into electrical energy through piezoelectric material will be useful for powering low power devices. Resonance is a property which able to optimize the generated output power by tuning the proof masses. The damping ratio is a considerable parameter for optimization. From analytical study, small damping ratio will enhance the output power of the piezoelectric energy harvester (PEH). This paper will present mathematical modelling approach, simulation verification and the conditional circuit named versatile precision full wave rectifier.

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Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.375 ◽

2017 ◽

Vol 897 ◽

pp. 375-378 ◽

Cited By ~ 2

Author(s):

Satoshi Torimi ◽

Koji Ashida ◽

Norihito Yabuki ◽

Masato Shinohara ◽

Takuya Sakaguchi ◽

...

Keyword(s):

Silicon Carbide ◽

Mechanical Strength ◽

Chemical Etching ◽

Imaging Technique ◽

Low Energy ◽

Indentation Hardness ◽

High Quality ◽

Surface Step ◽

Low Energy Electron ◽

Sic Wafer

As a new thinning and surface planarizing process of Silicon Carbide (SiC) wafer, we propose the completely thermal-chemical etching process; Si-vapor etching (Si-VE) technology. In this work, the effects of mechanical strength and surface step-terrace structure by Si-VE are investigated on the 4° off-axis 4H-SiC (0001) Si-face substrates. The indentation hardness of Si-VE surface is superior to the conventional chemo-mechanical polishing (CMP) surface even after epitaxial growth. The transverse strength of thinned Si-VE substrate is also superior to the conventional mechanically ground substrate. The surface step-terrace structures are observed by the low energy electron channeling contrast (LE-ECC) imaging technique. The latent scratch causes bunched step lines (BSLs) with various inhomogeneous step morphologies only on the CMP surface.

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