Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching

2015 ◽  
Vol 821-823 ◽  
pp. 537-540
Author(s):  
Ai Isohashi ◽  
Yasuhisa Sano ◽  
Tomohisa Kato ◽  
Kazuto Yamauchi
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Etching Rate ◽  
Wafer Surface ◽  
Sic Wafer

Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this paper, CARE was applied to the planarization of 6-inch silicon carbide (SiC) wafers, and removal properties were investigated. The etching rate was about 20nm/h, which is almost equal to that of 2-inch SiC wafer (16 nm/h). The rms roughness was reduced along with the removal depth, and step-terrace structure was observed in whole area of the on-axis wafer surface.

Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology

2017 ◽  
Vol 897 ◽  
pp. 375-378 ◽  
Author(s):  
Satoshi Torimi ◽  
Koji Ashida ◽  
Norihito Yabuki ◽  
Masato Shinohara ◽  
Takuya Sakaguchi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mechanical Strength ◽  
Chemical Etching ◽  
Imaging Technique ◽  
Low Energy ◽  
Indentation Hardness ◽  
High Quality ◽  
Surface Step ◽  
Low Energy Electron ◽  
Sic Wafer

As a new thinning and surface planarizing process of Silicon Carbide (SiC) wafer, we propose the completely thermal-chemical etching process; Si-vapor etching (Si-VE) technology. In this work, the effects of mechanical strength and surface step-terrace structure by Si-VE are investigated on the 4° off-axis 4H-SiC (0001) Si-face substrates. The indentation hardness of Si-VE surface is superior to the conventional chemo-mechanical polishing (CMP) surface even after epitaxial growth. The transverse strength of thinned Si-VE substrate is also superior to the conventional mechanically ground substrate. The surface step-terrace structures are observed by the low energy electron channeling contrast (LE-ECC) imaging technique. The latent scratch causes bunched step lines (BSLs) with various inhomogeneous step morphologies only on the CMP surface.

scholarly journals 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

2018 ◽  
Vol 924 ◽  
pp. 369-372 ◽  
Author(s):  
Shogo Okuyama ◽  
Keisuke Kurashima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Concentric Circle ◽  
Wafer Surface ◽  
Deep Etching ◽  
Gas Distributor ◽  
High Etching Rate ◽  
Hole Arrays ◽  
Rate Profile ◽  
Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

2019 ◽  
Vol 963 ◽  
pp. 520-524
Author(s):  
Keisuke Kurashima ◽  
Ryohei Kawasaki ◽  
Kenta Irikura ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Numerical Calculation ◽  
Transport Phenomena ◽  
Etching Rate ◽  
Single Crystalline ◽  
Gas Distributor ◽  
Rate Profile ◽  
Sic Wafer

The etching rate profile over the 50-mm diameter single-crystalline C-face 4H-SiC wafer by ClF3 gas was numerically evaluated by means of the numerical calculation accounting for the transport phenomena. The etching rate uniformity is expected to be improved by means of adjusting the pinhole diameter and their arrangement of the gas distributor.

Effect of Surface Damage on SiC Wafer Shape

2015 ◽  
Vol 821-823 ◽  
pp. 545-548 ◽  
Author(s):  
Kevin Moeggenborg ◽  
Thomas Kegg ◽  
Christopher Parfeniuk ◽  
Thomas Stoney ◽  
Jeffrey Quast
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Surface Damage ◽  
Wafer Surface ◽  
Processing Step ◽  
Shape Effects ◽  
Sic Wafer ◽  
Wafer Surfaces ◽  
Different Levels ◽  
Effect Of Surface

The flatness of a silicon carbide wafer in terms of bow and warp is the result of the combination of factors both material and process related. Sub-surface damage (SSD) from the wafering process steps can be considered as a thin film under compressive stress on the wafer surface. SSD is generally decreased with each subsequent processing step after the multiwire saw. Single-sided process steps can produce very different levels of SSD on opposing wafer surfaces, leading to high bow and warp values. The present study investigates the effects of SSD on wafer flatness at various process steps as well as methods to minimize shape effects due to SSD during and after processing.

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

2017 ◽  
Vol 897 ◽  
pp. 383-386 ◽  
Author(s):  
Ken Nakagomi ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Gas Transport ◽  
Etching Rate ◽  
Gas Distributor ◽  
Polycrystalline Silicon Carbide ◽  
Rate Profile ◽  
Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

Microfabricated Fiber Probe by Combination of Electric Arc Discharge and Chemical Etching Techniques

2012 ◽  
Vol 462 ◽  
pp. 38-41 ◽  
Author(s):  
Wan Maisarah Mukhtar ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari
Keyword(s):  
Optical Fibers ◽  
Chemical Etching ◽  
Arc Discharge ◽  
Etching Rate ◽  
Electric Arc ◽  
Buffer Solution ◽  
Fiber Probe ◽  
Optical Fiber Probes ◽  
Electric Arc Discharge ◽  
Fiber Probes

In this study, optical fiber probes were fabricated by combination of electric arc discharge and chemical etching techniques. Size of tips diameters fabricated using different etching solutions were observed. When the optical fibers were pulled and heated by the electric arc discharge using a fusion splicer, fiber tips with few microns in diameter were obtained. To minimize the tips diameter, the pulled fiber probes were etched vertically for 10 minutes using two different etching solutions namely 49% HF and HF buffer solution (49% HF and 40% NH4F) with ratio of 2:1. A thick overlayer was added on top of the HF solution to prevent dangerous vapors escape to the environment. When the tapered part of the pulled fiber (FP1) was dipped into 49% HF solution, the diameter of tip was slightly decreased from 4.41μm to 1.31μm with etching rate of 5.17x10-3 μms-1. When the pulled fiber (FP2) was etched into HF buffer solution, the etching rate was increased up to 52.35% with the etching rate of 10.85x10-3μms-1. The tip diameter was reduced from 7.01μm to 468.9 nm in diameter. Combination of “heat and pull” technique with chemical etching by using HF buffer solution produced fiber probe with small tip diameter.

scholarly journals Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3179
Author(s):  
Qi Wang ◽  
Kehong Zhou ◽  
Shuai Zhao ◽  
Wen Yang ◽  
Hongsheng Zhang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Low Cost ◽  
Etching Rate ◽  
Surface Damage ◽  
Device Fabrication ◽  
Irreversible Damage ◽  
Catalytic Role ◽  
Metal Assisted Chemical Etching ◽  
Gan Etching

Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device. In this paper, we demonstrate a damage-free, rapid metal-assisted chemical etching (MacEtch) method and perform an anisotropic, deep trenching of a GaN array. Regular GaN microarrays are fabricated based on the proposed method, in which CuSO4 and HF are adopted as etchants while ultraviolet light and Ni/Ag mask are applied to catalyze the etching process of GaN, reaching an etching rate of 100 nm/min. We comprehensively explore the etching mechanism by adopting three different patterns, comparing a Ni/Ag mask with a SiN mask, and adjusting the etchant proportion. Under the catalytic role of Ni/Ag, the GaN etching rate nearby the metal mask is much faster than that of other parts, which contributes to the formation of deep trenches. Furthermore, an optimized etchant is studied to restrain the disorder accumulation of excessive Cu particles and guarantee a continuous etching result. Notably, our work presents a novel low-cost MacEtch method to achieve GaN deep etching at room temperature, which may promote the evolution of GaN-based device fabrication.

scholarly journals Fabrication of Silicon Carbide Quantum Dots via Chemical-Etching Approach and Fluorescent Imaging for Living Cells

2014 ◽  
Vol 05 (04) ◽  
pp. 177-182
Author(s):  
Yuepeng Song ◽  
Dongsheng Gao ◽  
Hyoung Seop Kim ◽  
Cuiqin Qu ◽  
Jie Kang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Chemical Etching ◽  
Living Cells ◽  
Fluorescent Imaging

Formation of Through-Glass-Via (TGV) by Photo-Chemical Etching with High Selectivity

2012 ◽  
Vol 2012 (1) ◽  
pp. 000785-000792
Author(s):  
Zingway Pei ◽  
Jui-Po Sun ◽  
Hsin-Chen Lai ◽  
Pei-Jer Tzeng ◽  
Cha-Hsin Lin ◽  
...  
Keyword(s):  
Chemical Etching ◽  
High Selectivity ◽  
Laser Energy ◽  
Low Cost ◽  
Etching Rate ◽  
Ultra Violet ◽  
Amorphous Region ◽  
Large Area ◽  
Micro Cracks ◽  
Via Hole

In this work, we utilize a photo-chemical etching (PCE) method to form through-glass-via (TGV). The PCE is a low cost, damage-free and potentially large-area method for TGV formation. An ultra-violet (355 nm) pulse laser was used to illuminate the glass surface. The illuminated region will crystallize after thermal annealing in a furnace. The crystallized glass shows much faster etching rate than the amorphous region in HF solution. For a relatively thick (600 nm) glass, a via-hole with diameter of around 60 μm was demonstrated in laser energy of 11 J/cm2. No laser damages were observed. In comparison, at least 10 times higher energy was required to drill a glass directly. Micro-cracks were form around the glass-via. In addition, a 40 selectivity was achieved to the crystallized and amorphous region. This simple and useful method paves a straight road for 3-D integration.

A Complete System Modelling of Piezoelectric Energy Harvester (PEH) with Silicon Carbide (SiC) Used as Cantilever Base

2014 ◽  
Vol 69 (8) ◽  
Author(s):  
Mohd Nor Fakhzan Mohd Kazim ◽  
Selvanayakan Raman ◽  
Muhammad Hafiz Shafie ◽  
Nashrul Fazli Mohd Nasir ◽  
Asan Gani Abdul Muthalif
Keyword(s):  
Silicon Carbide ◽  
Output Power ◽  
Energy Harvester ◽  
Damping Ratio ◽  
Electrical Energy ◽  
System Modelling ◽  
Electronic Circuitry ◽  
Piezo Element ◽  
Piezoelectric Energy ◽  
Sic Wafer

Silicon carbide (SiC) is a material that possesses hardness and robustness to operate under high temperature condition. This work is a pilot in exploring the feasibility of cubic piezo element on the SiC wafer with integrated proof mass as horizontal cantilever with perpendicular displacement with respect to the normal plane. With the advance of electronic circuitry, the power consumption is reduced to nano-watts. Therefore, harvesting ambient energy and converting into electrical energy through piezoelectric material will be useful for powering low power devices. Resonance is a property which able to optimize the generated output power by tuning the proof masses. The damping ratio is a considerable parameter for optimization. From analytical study, small damping ratio will enhance the output power of the piezoelectric energy harvester (PEH). This paper will present mathematical modelling approach, simulation verification and the conditional circuit named versatile precision full wave rectifier.  

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