The Performance of Plasma and Multi-Physical Fields in DC Arc Plasma Reactor for CVD Diamond Film

2016 ◽  
Vol 852 ◽  
pp. 1140-1146
Author(s):  
Xiao Jing Li ◽  
Yong Liang Gao ◽  
Yan Yin ◽  
Shun Qi Zheng ◽  
Yang Sheng Zheng
Keyword(s):  
Diamond Film ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Plasma Temperature ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Arc Plasma ◽  
Cvd Diamond Film ◽  
Physical Fields ◽  
Dc Arc

Numerical simulation method was developed to investigate the performance of plasma and multi-physical fields in direct current (DC) arc plasma reactor for chemical vapor deposition (CVD) Diamond film,in order to obtain more information on the process of CVD. Finite Volume Method (FVM) was adopted. Continuous arc forming and the dynamic formation process of rotating arc plasma were shown in this paper. Multi-physics field in deposition chamber were modeled including flow field, temperature field. Distribution of velocity and temperature were obtained by solving momentum and energy equation with SIMPLE separation algorithm. Simulation results show that, plasma temperature near the cathode tip is the highest, which is more than 1×104K. The plasma distribution shape like the bell jar. The changing regularity of outlet velocity, temperature and static pressure with the distance from the anode center were revealed. The effectiveness of plasma temperature and gas flow calculated was confirmed by the experimental results. The research results provide the theoretical foundation for obtaining uniform diamond thick film.

Stress in Freestanding CVD Diamond Thick Film

2010 ◽  
Vol 426-427 ◽  
pp. 564-567
Author(s):  
Wen Zhuang Lu ◽  
Jia Jing Yuan ◽  
Dun Wen Zuo ◽  
Feng Xu ◽  
Yu Li Sun
Keyword(s):  
Thick Film ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Arc Plasma ◽  
X Ray Diffraction ◽  
X Ray ◽  
Original Surface ◽  
Stress Changes ◽  
Cvd Diamond Film ◽  
Dc Arc

The present paper describes research on stress in freestanding diamond thick film, diameter of 60mm, prepared on Mo substrate by DC arc plasma jet chemical vapor deposition (DCPCVD) method. The stress in the CVD diamond film was investigated by X-ray diffraction and Raman spectrum. The results show that the stress in the film is compressive. The stress changes little at the same homocentric round. The compressive stress along radial direction is that the stress in the centre of the film is lower than that in the edge at both the final surface and the original surface.

RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

2013 ◽  
Vol 284 ◽  
pp. 798-803 ◽  
Author(s):  
J.L. Liu ◽  
C.M. Li ◽  
R.H. Zhu ◽  
J.C. Guo ◽  
L.X. Chen ◽  
...  
Keyword(s):  
Diamond Film ◽  
Cvd Diamond ◽  
Cvd Diamond Film ◽  
Dc Arc

Direct Measurement of the Adhesive Fracture Resistance of CVD Diamond Particles

1998 ◽  
Vol 120 (4) ◽  
pp. 367-371 ◽  
Author(s):  
S. Kamiya ◽  
H. Takahashi ◽  
M. Saka ◽  
H. Abe´
Keyword(s):  
Adhesive Strength ◽  
Diamond Film ◽  
Fracture Resistance ◽  
Early Stage ◽  
Chemical Vapor ◽  
Maximum Load ◽  
Cvd Diamond ◽  
Adhesive Fracture ◽  
Diamond Particles ◽  
Cvd Diamond Film

Diamond film produced by chemical vapor deposition (CVD) is being used in the electronics industry because of their excellent properties. In order to measure the adhesive strength of CVD diamond, external load is directly applied in a scanning electron microscope to the CVD diamond particles that sparsely appear on silicon substrate in the early stage of deposition. These particles are called nuclei when they are small and grow into contact with each other to form polycrystalline CVD diamond film. Diamond film was supposed to adhere to the substrate at only these discrete nucleation points, which might result in weak adhesive strength. We measure the maximum load, as the adhesive fracture resistance, required to scratch off the particles with 2–13 μm diameter. Adhesive fracture resistance is found to increase with the diameter of the particle. Hence we conclude that CVD diamond does not adhere only at the nucleation points but that the whole contact area to the substrate is responsible for its adhesive strength.

Deposition and Application of CVD Diamond Film on the Interior-Hole Surface of Shaped-Wire Drawing Die

2012 ◽  
Vol 217-219 ◽  
pp. 1022-1027
Author(s):  
Liu Jin Bian ◽  
Zi Chao Lin ◽  
Fang Hong Sun ◽  
Song Shou Guo
Keyword(s):  
Surface Quality ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Wire Drawing ◽  
Drawing Die ◽  
Before And After ◽  
Cvd Diamond Film ◽  
Drawing Dies

Abstract：The shaped-wire drawing dies are used more and more popularly in the metal product industry for several advantages of locked structure. In present investigation, a layer of CVD diamond film is deposited on the interior-hole surface of shaped-wire drawing die using a hot filament chemical vapor deposition (HFCVD) method, followed by a surface polishing process, aiming at further prolonging its working lifetime of shaped-wire drawing dies and improving the surface quality of produced wires. The scanning electron microscopy (SEM), surface profiler and Raman spectroscopy are adopted to present the characterization of both as-deposited CVD diamond films before and after polishing. Furthermore, the performance of as-fabricated CVD diamond coated drawing dies is examined in the practical production process. The results show that as-deposited CVD diamond films are homogeneous and the working surface is smoother after polishing. Comparing with the conventional shaped drawing dies, the working lifetime of the diamond coated shaped-wire drawing dies can be increased by a factor of above 10, and the shaped wires with higher surface quality can be obtained.

Study on the Surface Integrity of Polished Diamond Thick Film Prepared by EACVD

2007 ◽  
Vol 359-360 ◽  
pp. 319-323
Author(s):  
Feng Xu ◽  
Dun Wen Zuo ◽  
Rong Fa Chen ◽  
Wen Zhuang Lu ◽  
Min Wang
Keyword(s):  
Surface Roughness ◽  
Thick Film ◽  
Surface Integrity ◽  
Diamond Film ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Cvd Diamond ◽  
Deformation Energy ◽  
Polished Surface ◽  
Cvd Diamond Film

Chemical vapor deposited (CVD) diamond film is a good materials for cutting tools as its a series of excellent properties. But because of its polycrystalline morphology, CVD diamond thick film has a rough surface that limits its application in engineering. In this paper, study was carried out on the mechanical lapping of diamond film. It is shown that surface roughness of the film was reduced from Ra 4.5μm to Ra 0.2μm after 50-minute polishing. The surface integrity of polished diamond thick film was investigated, which includes surface roughness, morphology and residual stress. There are a lot of micro defects such as grooves, gas cavities and micro cracks on the polished surface, which are the intrinsic defects generated in the deposition process of CVD diamond film. The tensile stress of the film reduced through polishing as the release of the deformation energy stored in the film.

Selective Growth of B-Doped Diamond on Si-Doped Diamond Film

2012 ◽  
Vol 217-219 ◽  
pp. 1013-1017
Author(s):  
Y.X. Cui ◽  
B. Shen ◽  
F.H. Sun ◽  
Z.M. Zhang
Keyword(s):  
Diamond Film ◽  
Sacrificial Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Selective Area ◽  
Si Doped ◽  
Cvd Diamond Film ◽  
Hot Filament ◽  
Area Deposition

Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding tetraethoxysilane (TEOS) into acetone as source of reactant gas during the growth process. The samples of diamond films are investigated by scanning electron micrograph (SEM), Raman spectrum, X-ray diffractometry (XRD) and surface profiler. The experimental results show that compared with pure diamond film, Si doped CVD diamond film exhibits grain refinement and smoother surface. Then selective area deposition (SAD) of B-doped diamond films are achieved on both Si doped CVD diamond film and pure CVD diamond film with silicon dioxide layer as sacrificial layer. SEM investigation demonstrates that the boundary of patterning on pure diamond film is rather fuzzy while on pure diamond film it is trim and distinct, which is mainly attributed to the relatively low surface roughness.

Study on EDM Polishing of CVD Diamond Films

2006 ◽  
Vol 315-316 ◽  
pp. 464-468 ◽  
Author(s):  
Wen Zhuang Lu ◽  
Dun Wen Zuo ◽  
Min Wang ◽  
Feng Xu ◽  
Xiang Feng Li
Keyword(s):  
Diamond Film ◽  
Discharge Current ◽  
Material Removal ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Machined Surface ◽  
Cvd Diamond Film ◽  
Pulse On Time

Chemical vapor deposition (CVD) diamond is known for its superior characteristics such as hardness, toughness and wear resistance. However, due to these factors, machining CVD diamond is a difficult material removal process. A new technique to polish CVD diamond film efficiently is reported in the present paper. In the CVD deposition process, boron was doped into diamond to fabricate high-quality semi-conductive film, which make it possible to machine diamond film by electro discharged machining (EDM) method. The relationship between EDM parameter and removal processing was investigated in details. The machined surface of boron doped (B-doped) diamond films was studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that EDM polishing is a highspeed material removal and low cost method for CVD diamond polishing. When the discharge current and pulse-on time increase in a certain range, the cutting-off speed and roughness will increase correspondingly. The roughness of EDM polished CVD diamond film surface is Ra<0.5μm when the discharge current is at 4A and pulse-on time is at 200μs.

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