Selective Growth of B-Doped Diamond on Si-Doped Diamond Film

2012 ◽  
Vol 217-219 ◽  
pp. 1013-1017
Author(s):  
Y.X. Cui ◽  
B. Shen ◽  
F.H. Sun ◽  
Z.M. Zhang
Keyword(s):  
Diamond Film ◽  
Sacrificial Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Selective Area ◽  
Si Doped ◽  
Cvd Diamond Film ◽  
Hot Filament ◽  
Area Deposition

Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding tetraethoxysilane (TEOS) into acetone as source of reactant gas during the growth process. The samples of diamond films are investigated by scanning electron micrograph (SEM), Raman spectrum, X-ray diffractometry (XRD) and surface profiler. The experimental results show that compared with pure diamond film, Si doped CVD diamond film exhibits grain refinement and smoother surface. Then selective area deposition (SAD) of B-doped diamond films are achieved on both Si doped CVD diamond film and pure CVD diamond film with silicon dioxide layer as sacrificial layer. SEM investigation demonstrates that the boundary of patterning on pure diamond film is rather fuzzy while on pure diamond film it is trim and distinct, which is mainly attributed to the relatively low surface roughness.

Deposition and Application of CVD Diamond Film on the Interior-Hole Surface of Shaped-Wire Drawing Die

2012 ◽  
Vol 217-219 ◽  
pp. 1022-1027
Author(s):  
Liu Jin Bian ◽  
Zi Chao Lin ◽  
Fang Hong Sun ◽  
Song Shou Guo
Keyword(s):  
Surface Quality ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Wire Drawing ◽  
Drawing Die ◽  
Before And After ◽  
Cvd Diamond Film ◽  
Drawing Dies

Abstract：The shaped-wire drawing dies are used more and more popularly in the metal product industry for several advantages of locked structure. In present investigation, a layer of CVD diamond film is deposited on the interior-hole surface of shaped-wire drawing die using a hot filament chemical vapor deposition (HFCVD) method, followed by a surface polishing process, aiming at further prolonging its working lifetime of shaped-wire drawing dies and improving the surface quality of produced wires. The scanning electron microscopy (SEM), surface profiler and Raman spectroscopy are adopted to present the characterization of both as-deposited CVD diamond films before and after polishing. Furthermore, the performance of as-fabricated CVD diamond coated drawing dies is examined in the practical production process. The results show that as-deposited CVD diamond films are homogeneous and the working surface is smoother after polishing. Comparing with the conventional shaped drawing dies, the working lifetime of the diamond coated shaped-wire drawing dies can be increased by a factor of above 10, and the shaped wires with higher surface quality can be obtained.

Study on EDM Polishing of CVD Diamond Films

2006 ◽  
Vol 315-316 ◽  
pp. 464-468 ◽  
Author(s):  
Wen Zhuang Lu ◽  
Dun Wen Zuo ◽  
Min Wang ◽  
Feng Xu ◽  
Xiang Feng Li
Keyword(s):  
Diamond Film ◽  
Discharge Current ◽  
Material Removal ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Machined Surface ◽  
Cvd Diamond Film ◽  
Pulse On Time

Chemical vapor deposition (CVD) diamond is known for its superior characteristics such as hardness, toughness and wear resistance. However, due to these factors, machining CVD diamond is a difficult material removal process. A new technique to polish CVD diamond film efficiently is reported in the present paper. In the CVD deposition process, boron was doped into diamond to fabricate high-quality semi-conductive film, which make it possible to machine diamond film by electro discharged machining (EDM) method. The relationship between EDM parameter and removal processing was investigated in details. The machined surface of boron doped (B-doped) diamond films was studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that EDM polishing is a highspeed material removal and low cost method for CVD diamond polishing. When the discharge current and pulse-on time increase in a certain range, the cutting-off speed and roughness will increase correspondingly. The roughness of EDM polished CVD diamond film surface is Ra<0.5μm when the discharge current is at 4A and pulse-on time is at 200μs.

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Compact and Efficient HFCVD for Electronic Grade Diamond and Related Materials

2009 ◽  
Vol 1203 ◽  
Author(s):  
R. Vispute ◽  
Andrew Seiser ◽  
Geun Lee ◽  
Jaurette Dozier ◽  
Jeremy Feldman ◽  
...  
Keyword(s):  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Efficiency ◽  
Raman Shift ◽  
Compositional Variation ◽  
Force Microscopy ◽  
Substrate Rotation ◽  
Sample Rotation ◽  
Hot Filament

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

2019 ◽  
Vol 19 (2) ◽  
pp. 672-677 ◽  
Author(s):  
Raju Ahmed ◽  
Anwar Siddique ◽  
Jonathan Anderson ◽  
Chris Engdahl ◽  
Mark Holtz ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Selective Area ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Area Deposition

Selective area deposition of diamond thin films on patterns of porous silicon by hot‐filament chemical vapor deposition

1995 ◽  
Vol 67 (24) ◽  
pp. 3557-3559 ◽  
Author(s):  
S. Mirzakuchaki ◽  
M. Hajsaid ◽  
H. Golestanian ◽  
R. Roychoudhury ◽  
E. J. Charlson ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Area ◽  
Diamond Thin Films ◽  
Hot Filament ◽  
Area Deposition

The Performance of Plasma and Multi-Physical Fields in DC Arc Plasma Reactor for CVD Diamond Film

2016 ◽  
Vol 852 ◽  
pp. 1140-1146
Author(s):  
Xiao Jing Li ◽  
Yong Liang Gao ◽  
Yan Yin ◽  
Shun Qi Zheng ◽  
Yang Sheng Zheng
Keyword(s):  
Diamond Film ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Plasma Temperature ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Arc Plasma ◽  
Cvd Diamond Film ◽  
Physical Fields ◽  
Dc Arc

Numerical simulation method was developed to investigate the performance of plasma and multi-physical fields in direct current (DC) arc plasma reactor for chemical vapor deposition (CVD) Diamond film,in order to obtain more information on the process of CVD. Finite Volume Method (FVM) was adopted. Continuous arc forming and the dynamic formation process of rotating arc plasma were shown in this paper. Multi-physics field in deposition chamber were modeled including flow field, temperature field. Distribution of velocity and temperature were obtained by solving momentum and energy equation with SIMPLE separation algorithm. Simulation results show that, plasma temperature near the cathode tip is the highest, which is more than 1×104K. The plasma distribution shape like the bell jar. The changing regularity of outlet velocity, temperature and static pressure with the distance from the anode center were revealed. The effectiveness of plasma temperature and gas flow calculated was confirmed by the experimental results. The research results provide the theoretical foundation for obtaining uniform diamond thick film.

Electrical Properties in Cvd Diamond Films

1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Average Distance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Time Resolved ◽  
Chemical Vapor Deposited ◽  
Natural Type ◽  
Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

CVD Diamond Films Growth on Silicon Nitride Inserts (Si3N4) with High Nucleation Density by Functionalization Seeding

2012 ◽  
Vol 727-728 ◽  
pp. 1433-1438 ◽  
Author(s):  
R.A. Campos ◽  
A. Contin ◽  
Vladimir J. Trava-Airoldi ◽  
J.R. Moro ◽  
D.M. Barquete ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Diamond Film ◽  
Cutting Tools ◽  
Diamond Films ◽  
Base Material ◽  
Cvd Diamond ◽  
Nucleation Density ◽  
Force Microscopy ◽  
Low Thermal Expansion ◽  
Hot Filament

Silicon Nitride is largely used as the base material to manufacture cutting tools. Due to its low thermal expansion coefficient it is ideal candidate for CVD diamond deposition. In this work, we functionalized the surface of silicon nitride inserts (Si3N4) with a polymer (PDDA Poly (diallyldimethylamonium chloride - Mw 40000)) to promote seeding with nanodiamond particles. The seeding was performed in water slurry containing 4 nm diamond particles dispersed by PSS Poly (sodium4-styrenesulfonate) polymer. CVD diamond films, with high nucleation density, were deposited in a hot filament reactor. Film morphology was characterized by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Diamond film quality was determined by Raman Spectroscopy. CVD diamond film adherence was evaluated using Rockwell C indentation.

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