Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

2020 ◽  
Vol 993 ◽  
pp. 927-932
Author(s):  
Zhi Wei He ◽  
Hong Xiao Lin ◽  
Chun Yan Li ◽  
Ashok M. Mahajan ◽  
Swati A. Gupta ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Precursor Solution ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Mis Devices ◽  
Iv Curves ◽  
Silicon Sources

Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

Fabrication of low dielectric constant polyimide/TiO2 nanofibers with enhanced UV-light shielding properties

2018 ◽  
Vol 31 (8) ◽  
pp. 986-995
Author(s):  
Lei Wang ◽  
Guifen Gong ◽  
Junyao Shen ◽  
Jinsong Leng
Keyword(s):  
Dielectric Constant ◽  
Light Absorption ◽  
Composite Nanofibers ◽  
Uv Light ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Number Density ◽  
Tio2 Nanofibers ◽  
Low Dielectric ◽  
Mechanical Tensile

Polyimide (PI)/titanium dioxide (TiO2) composite nanofibers (NFs) with average diameters of 200–250 nm were synthesized via electrospinning. The total number density of dipoles decreased significantly, owing to the porous structures and compact interface between TiO2 NPs and PI matrix. All PI/TiO2 NFs maintain low dielectric constants and losses. For example, the dielectric constants of PI/TiO2-6% NFs are all lower than 2.6, being exposed to temperatures from 25°C to 200°C. Meantime, the dielectric losses of PI/TiO2-6% NFs are below 0.005. For ultraviolet (UV)-light shielding performance, the PI/TiO2 NFs exhibited good UV-light shielding and corresponding anti-photoaging properties. The reason can be ascribed from high UV-light absorption and scattering ability in the TiO2 NPs. The best UV-light absorption (average: 3.71) and corresponding absorption decay (15.13%) were achieved for optimized PI/TiO2-6% NFs. Other fundamental characteristics, such as the thermal stability, mechanical tensile property, and hydrophobicity, were also investigated. Such low dielectric constant PI/TiO2 composite NFs can be alternatively chosen under a longtime UV-light exposing condition.

Deposition and Characterization of Low-Dielectric-Constant SiOC(-H) Thin Films for Interlayer Dielectrics in Multilevel Interconnections

2007 ◽  
Vol 50 (6) ◽  
pp. 1803 ◽  
Author(s):  
Rangaswamy Navamathavan ◽  
An Soo Jung ◽  
Hyun Seung Kim ◽  
Young Jun Jang ◽  
Chi Kyu Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectrics ◽  
Low Dielectric

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Porous Silicon Oxynitride Films Derived from Polysilazane as a Novel Low-Dielectric Constant Material

1999 ◽  
Vol 565 ◽  
Author(s):  
T. Aoki ◽  
Y Shimizu ◽  
T. Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Silicon Oxynitride ◽  
Low Dielectric Constant ◽  
Oxidation Reactions ◽  
Sem Images ◽  
Cross Sectional ◽  
Low Dielectric ◽  
Inorganic Films ◽  
Hydrophobic Treatment

AbstractA novel spin on material derived from perhydropolysilazane that converts into ultra-low k inorganic films is described in this paper. The obtained films, cured at 400°C in N2 atmosphere, exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean-room mbient for 2 months. Cross-sectional SEM images of the cured films show the aggregation of small granules with diameters ranging from 5 to 30 nm. The films can be obtained by conventional SOG process: spin-coating, baking and curing, without any additional process such as hydrophobic treatment.The average atomic compositions of the films are, Si/O/N/C = 40/55/5/0.5 (atomic %), by XPS analysis. These results indicate that the films have hydrogen silicon oxynitride structures. No evolution of H2O and NH3 was detected by TDS analysis in the temperature range of RT to 800°C. Hydrophobic Si-H and Si-H2 groups remaining in the film might prevent water absorption, resulting in the low dielectric constant.The remainder of Si-H and Si-H2 constituents in the cured films is the result of selective oxidation reactions of perhydropolysilazane in the baking process with the use of a specific catalyst. The structures of the films are tailored by altering the amount of the catalyst. In this study, we also demonstrate the relationship between the effect of the catalyst and the film properties.

Conductances of potassium chloride and tetrabutyl ammonium picrate in dioxan-water mixtures at pressures up to 2500 bars

1970 ◽  
Vol 23 (5) ◽  
pp. 905 ◽  
Author(s):  
PJ Pearce ◽  
W Strauss
Keyword(s):  
Dielectric Constant ◽  
Potassium Chloride ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Solvent Concentration ◽  
Electrolytic Conductance ◽  
Low Dielectric ◽  
Tetrabutyl Ammonium ◽  
Finite Concentration ◽  
Tetrabutylammonium Picrate

The electrolytic conductance of solutions of potassium chloride and tetrabutyl- ammonium picrate over a range of concentrations have been measured in dioxan-water mixtures containing 0, 25, 50, 70, and 80% dioxan at 25� and pressures up to 1000 and 2500 bars respectively for the two solutes. The solvent concentration range corresponds to a range of dielectric constants of 78.3 (for water) to 11.98 (80% dioxan). The association of KCl in solutions of low dielectric constant is reduced by increasing pressure, so that the conductances of the solutions of finite concentration are not reduced as much by pressure as at infinite dilution. In contrast to this, the solutions of the tetrabutylammonium picrate are wholly dissociated even in very low dielectric constant solvents, as is shown by the limited concentration dependence of the conductance pressure characteristics.

Sign in / Sign up

Export Citation Format

Share Document