Porous Silicon Oxynitride Films Derived from Polysilazane as a Novel Low-Dielectric Constant Material

1999 ◽  
Vol 565 ◽  
Author(s):  
T. Aoki ◽  
Y Shimizu ◽  
T. Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Silicon Oxynitride ◽  
Low Dielectric Constant ◽  
Oxidation Reactions ◽  
Sem Images ◽  
Cross Sectional ◽  
Low Dielectric ◽  
Inorganic Films ◽  
Hydrophobic Treatment

AbstractA novel spin on material derived from perhydropolysilazane that converts into ultra-low k inorganic films is described in this paper. The obtained films, cured at 400°C in N2 atmosphere, exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean-room mbient for 2 months. Cross-sectional SEM images of the cured films show the aggregation of small granules with diameters ranging from 5 to 30 nm. The films can be obtained by conventional SOG process: spin-coating, baking and curing, without any additional process such as hydrophobic treatment.The average atomic compositions of the films are, Si/O/N/C = 40/55/5/0.5 (atomic %), by XPS analysis. These results indicate that the films have hydrogen silicon oxynitride structures. No evolution of H2O and NH3 was detected by TDS analysis in the temperature range of RT to 800°C. Hydrophobic Si-H and Si-H2 groups remaining in the film might prevent water absorption, resulting in the low dielectric constant.The remainder of Si-H and Si-H2 constituents in the cured films is the result of selective oxidation reactions of perhydropolysilazane in the baking process with the use of a specific catalyst. The structures of the films are tailored by altering the amount of the catalyst. In this study, we also demonstrate the relationship between the effect of the catalyst and the film properties.

Fabrication of low dielectric constant polyimide/TiO2 nanofibers with enhanced UV-light shielding properties

2018 ◽  
Vol 31 (8) ◽  
pp. 986-995
Author(s):  
Lei Wang ◽  
Guifen Gong ◽  
Junyao Shen ◽  
Jinsong Leng
Keyword(s):  
Dielectric Constant ◽  
Light Absorption ◽  
Composite Nanofibers ◽  
Uv Light ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Number Density ◽  
Tio2 Nanofibers ◽  
Low Dielectric ◽  
Mechanical Tensile

Polyimide (PI)/titanium dioxide (TiO2) composite nanofibers (NFs) with average diameters of 200–250 nm were synthesized via electrospinning. The total number density of dipoles decreased significantly, owing to the porous structures and compact interface between TiO2 NPs and PI matrix. All PI/TiO2 NFs maintain low dielectric constants and losses. For example, the dielectric constants of PI/TiO2-6% NFs are all lower than 2.6, being exposed to temperatures from 25°C to 200°C. Meantime, the dielectric losses of PI/TiO2-6% NFs are below 0.005. For ultraviolet (UV)-light shielding performance, the PI/TiO2 NFs exhibited good UV-light shielding and corresponding anti-photoaging properties. The reason can be ascribed from high UV-light absorption and scattering ability in the TiO2 NPs. The best UV-light absorption (average: 3.71) and corresponding absorption decay (15.13%) were achieved for optimized PI/TiO2-6% NFs. Other fundamental characteristics, such as the thermal stability, mechanical tensile property, and hydrophobicity, were also investigated. Such low dielectric constant PI/TiO2 composite NFs can be alternatively chosen under a longtime UV-light exposing condition.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Conductances of potassium chloride and tetrabutyl ammonium picrate in dioxan-water mixtures at pressures up to 2500 bars

1970 ◽  
Vol 23 (5) ◽  
pp. 905 ◽  
Author(s):  
PJ Pearce ◽  
W Strauss
Keyword(s):  
Dielectric Constant ◽  
Potassium Chloride ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Solvent Concentration ◽  
Electrolytic Conductance ◽  
Low Dielectric ◽  
Tetrabutyl Ammonium ◽  
Finite Concentration ◽  
Tetrabutylammonium Picrate

The electrolytic conductance of solutions of potassium chloride and tetrabutyl- ammonium picrate over a range of concentrations have been measured in dioxan-water mixtures containing 0, 25, 50, 70, and 80% dioxan at 25� and pressures up to 1000 and 2500 bars respectively for the two solutes. The solvent concentration range corresponds to a range of dielectric constants of 78.3 (for water) to 11.98 (80% dioxan). The association of KCl in solutions of low dielectric constant is reduced by increasing pressure, so that the conductances of the solutions of finite concentration are not reduced as much by pressure as at infinite dilution. In contrast to this, the solutions of the tetrabutylammonium picrate are wholly dissociated even in very low dielectric constant solvents, as is shown by the limited concentration dependence of the conductance pressure characteristics.

Synthesis of a Novel Low Dielectric Constant Fluorine Containing Epoxy

2012 ◽  
Vol 262 ◽  
pp. 448-453 ◽  
Author(s):  
Jian Yong Lv ◽  
Yan Meng ◽  
Li Fan He ◽  
Teng Qiu ◽  
Xiao Yu Li ◽  
...  
Keyword(s):  
Weight Loss ◽  
Dielectric Constant ◽  
Bisphenol A ◽  
Water Absorption ◽  
Diglycidyl Ether ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Degradation Temperature

A novel fluorine containing epoxy 4-fluoro-4′,4″-diepoxypropoxy triphenyl methane (FDE) was designed and synthesized. The synthesized epoxy was cured by methyl nadic anhydride (MNA) and diglycidyl ether of bisphenol A (DGEBA) was chosen for comparison. Both glass transfer temperature (Tg) and 5% weight loss degradation temperature (Td5%) of cured FDE are over 60°C higher than that of DGEBA. Dielectric constants of the cured FDE at 106 Hz and 107 Hz are 3.09 and 2.91, comparing to 3.50 and 3.24 of the cured DGEBA, respectively. Furthermore, water absorption of the cured FDE is lower than that of DGBEA.

Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film

1996 ◽  
Vol 443 ◽  
Author(s):  
S. W. Lim ◽  
M. Miyata ◽  
T. Naito ◽  
Y. Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Polarization Component ◽  
Low Dielectric ◽  
Step Coverage

AbstractOne solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

2020 ◽  
Vol 993 ◽  
pp. 927-932
Author(s):  
Zhi Wei He ◽  
Hong Xiao Lin ◽  
Chun Yan Li ◽  
Ashok M. Mahajan ◽  
Swati A. Gupta ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Precursor Solution ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Mis Devices ◽  
Iv Curves ◽  
Silicon Sources

Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

scholarly journals Development of Polymer Blends Based on PVA:POZ with Low Dielectric Constant for Microelectronic Applications

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shujahadeen B. Aziz ◽  
M. F. Z. Kadir ◽  
M. H. Hamsan ◽  
H. J. Woo ◽  
M. A. Brza
Keyword(s):  
Dielectric Constant ◽  
Polymer Blends ◽  
Power Dissipation ◽  
Electrical Impedance ◽  
Polymeric Materials ◽  
Low Dielectric Constant ◽  
Electrode Polarization ◽  
Sem Images ◽  
Low Dielectric ◽  
Crystalline Domains

Abstract There is a huge request for the development of low dielectric constant polymeric materials for microelectronic applications. In thisstudy, polymer blends based on PVA:POZ with low dielectric constant has been fabricated. The results of XRD indicate that crystalline domain is enhanced at higher POZ concentration. Brilliant phases between spherulitesare attributed to the enhanced crystalline domains at high POZ content. White portions are appeared in SEM images on the surface of PVA:POZ blends. From EDX analysis, these leaked portions are referred to the POZ material. The number and sizes of the white portions were also found to increase with increasing the POZ content. Using electrical equivalent circuits (EEC), electrical impedance plots (Z″ vs Z′) are fitted for all the samples. The results of impedance study illustrated that the resistivity of the samples increases with increasing POZ concentration. From dielectric measurements, dielectric constant was found to decrease with the introduction of more POZ into the PVA polymer. It is found to be about 1.68 at 40 wt.% POZ. Insulating materials with low dielectric constant (ε′ < 2) are found to be important in the electronics manufacturing, owing to decrease in crosstalk, resistance-capacitance time delay and power dissipation in high-density circuits. Therefore, further investigations concerning the dielectric constant and impedance for all the samples are also carried out. The real and imaginary parts of electric modulus are studied, where minimizing of electrode polarization can be achieved.

Ultra-low dielectric constant materials with hydrophobic property derived from polyhedral oligomeric silsequioxane (POSS) and perfluoro-aromatics

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87433-87439 ◽  
Author(s):  
Jinmeng Hao ◽  
Yanfeng Wei ◽  
Jianxin Mu
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Hydrophobic Property ◽  
Hydrophobic Properties ◽  
Low Dielectric ◽  
Arylene Ether ◽  
Low Dielectric Constant Materials ◽  
Soluble Poly

Soluble poly(arylene ether)s with perfluoro-aromatics and POSS in the main chains exhibited ultra low dielectric constants and hydrophobic properties.

Preparation and Properties of Polyisoimides as a Highly Dimensionally Stable Polyimide Precursor with Low Dielectric Constant

1997 ◽  
Vol 9 (3) ◽  
pp. 333-344 ◽  
Author(s):  
Hiroshi Seino ◽  
Osamu Haba ◽  
Amane Mochizuki ◽  
Masahiro Yoshioka ◽  
Mitsuru Ueda
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Isomerization Reaction ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fluorinated Polyimides ◽  
Wide Range ◽  
Biphenyltetracarboxylic Dianhydride ◽  
Polyimide Precursor ◽  
Dipolar Aprotic Solvents

Fluorinated polyimides (PIs) with low dielectric constant and high dimensional stability have been developed using polyisoimides (PIIs) as a polyimide precursor. The PIIs were prepared by the ring-opening polyaddition of the dianhydrides pyromellitic dianhydride, biphenyltetracarboxylic dianhydride and 4, 4′-hexafluoropropylidenedi(phthalic anhydride) with the diamines 2, 2′-dimethylbenzidine and 2, 2′-bis(trifluoromethyl)benzidine, followed by treatment with trifluoroacetic anhydride/triethylamine or dicyclohexylcarbodiimide in N;N-dimethylacetamide. The PIIs were soluble in a wide range of solvents including dipolar aprotic solvents, cyclohexanone and tetrahydrofuran at room temperature, and easy to convert to corresponding PIs by high thermal treatment. The resulting PIs showed low dielectric constants of less than 3 at 1 MHz as well as low CTEs. Furthermore, during the isomerization reaction, migration of copper in the PI film was hardly observed.

Introducing DuPont™ GreenTape™ 9K5 Low Dielectric Constant, Low Temperature Co-Fired Ceramic (LTCC) Tape System

2011 ◽  
Vol 2011 (1) ◽  
pp. 000544-000552
Author(s):  
Deepukumar M. Nair ◽  
James Parisi ◽  
K.M. Nair ◽  
Mark McCombs ◽  
Michael Smith ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Millimeter Wave ◽  
High Speed ◽  
High Reliability ◽  
Signal Propagation ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Material System ◽  
Low Dielectric

Low Temperature Co-fired Ceramic (LTCC) material systems have been successfully used in microwave and millimeter wave systems for several years. LTCC has very low dielectric loss, high reliability due to inherent hermeticity; high interconnect density, multilayer processing capability leading to true 3D packaging, and better cost-performance balance. While the medium range dielectric constants (7.00 – 8.00) offered by current tape systems have advantages, it is generally difficult to realize high speed systems and efficient antennas on LTCC, especially at millimeter wave frequencies. The difficulty arises from the reduced signal propagation velocity in high-speed applications, and lower radiation efficiency for antennas, both due to higher dielectric constant. To enable and extend applications of LTCC technology to these subsystems, DuPont has developed a new low dielectric constant LTCC system – DuPont™ GreenTape™ 9K5 - which has a dielectric constant of 5.80 (at 10 GHz) that is compatible with the commercial DuPont™ GreenTape™ 9K7 LTCC System. This is achieved without compromising excellent microwave loss properties of the 9KX GreenTape™ platform. These materials systems enable high-speed, high reliability applications while also realizing efficient antennas on LTCC. This paper presents initial characterization of the new DuPont™ GreenTape™ 9K5 LTCC system consisting of low K dielectric tape, gold and silver conductors to evaluate the effects of chemistry, processing conditions, processing latitude, microstructure, and microwave performance. Test coupons with various transmission and resonating structures are designed, fabricated, and tested for the evaluation of transmission losses and dielectric properties. Stability of the material system over multiple re-fire steps is also examined

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