Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism

2009 ◽  
Vol 152-153 ◽  
pp. 283-286 ◽  
Author(s):  
V.A. Kulbachinskii ◽  
L. Shchurova
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Negative Magnetoresistance ◽  
Free Charge ◽  
Carrier Scattering ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

THE THERMODYNAMIC, TRANSPORT AND MAGNETOTRANSPORT PROPERTIES OF Mn-DOPED GaAs/InGaAs/GaAs QUANTUM WELL WITH FERROMAGNETISM

2009 ◽  
Vol 23 (17) ◽  
pp. 3596-3601 ◽  
Author(s):  
LJUDMILA SHCHUROVA ◽  
VLADIMIR KULBACHINSKII
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Free Charge ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn-. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

SPIN DEPENDENT WIGNER FUNCTION SIMULATIONS OF DILUTED MAGNETIC SEMICONDUCTOR SUPERLATTICES – B FIELD TUNING

2007 ◽  
Vol 17 (04) ◽  
pp. 877-888 ◽  
Author(s):  
H. L. GRUBIN
Keyword(s):  
High Frequency ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Device Fabrication ◽  
Double Barrier ◽  
General Terms ◽  
High Frequency Operation ◽  
Diluted Magnetic ◽  
Superlattice Structures ◽  
The Magnetic Field

Two terminal devices have traditionally provided band-structure based high frequency operation. Third terminal control often involves hybrid design approaches. The presence of diluted magnetic semiconductor layers in device fabrication should permit the magnetic field to function as a pseudothird terminal. This is discussed for single barrier, double barrier and superlattice structures, where control is demonstrated. The limits of high frequency operation are discussed in general terms with application to barrier devices and superlattices containing DMS layers.

Cathodoluminescence study of diluted magnetic semiconductor quantum well/micromagnet hybrid structures

2001 ◽  
Vol 79 (12) ◽  
pp. 1789-1791 ◽  
Author(s):  
J. Kossut ◽  
I. Yamakawa ◽  
A. Nakamura ◽  
G. Cywiński ◽  
K. Fronc ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Hybrid Structures ◽  
Semiconductor Quantum Well ◽  
Diluted Magnetic ◽  
Cathodoluminescence Study

Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well

2004 ◽  
Vol 84 (15) ◽  
pp. 2826-2828 ◽  
Author(s):  
H. Schömig ◽  
A. Forchel ◽  
S. Halm ◽  
G. Bacher ◽  
J. Puls ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Quantum Well ◽  
Diluted Magnetic

Electronic structure and magnetic properties of diluted magnetic semiconductor K and Mn co-doped BaCd2As2 from first-principles calculations

2014 ◽  
Vol 28 (14) ◽  
pp. 1450111 ◽  
Author(s):  
L. Hua ◽  
Q. L. Zhu
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Density Functional ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Antiferromagnetic Coupling ◽  
Generalized Gradient ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
Co Doped

In this paper, we have investigated the electronic structure and magnetic properties of K and Mn co-doped BaCd 2 As 2 using density functional theory within the generalized gradient approximation ( GGA ) + U schemes. Calculations show that the ground state magnetic structure of Mn -doped BaCd 2 As 2 is antiferromagnetic while K and Mn co-doped BaCd 2 As 2 is ferromagnetic. Electronic structures indicate that the superexchange mechanism leads to the antiferromagnetic coupling between Mn atoms in Mn -doped BaCd 2 As 2 while the hole-mediated Zener's p–d exchange mechanism leads to the ferromagnetic coupling between Mn atoms in K and Mn co-doped BaCd 2 As 2.

Electron g-Factor in Diluted Magnetic Semiconductor Quantum Well with Parabolic Potential in the Presence of Rashba Effect and Magnetic Field

2015 ◽  
Vol 70 (2) ◽  
pp. 109-114 ◽  
Author(s):  
Arif M. Babanlı ◽  
Ekrem Artunç ◽  
Turgut F. Kasalak
Keyword(s):  
Magnetic Field ◽  
Energy Spectrum ◽  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Electron Energy Spectrum ◽  
Ion Concentration ◽  
Spin Orbital ◽  
Parabolic Potential ◽  
Diluted Magnetic

AbstractWe have studied the Rashba spin-orbital effect on a diluted magnetic semiconductor (DMS) quantum well with parabolic potential in the presence of a magnetic field parallel to the z axis, taking into account the Zeeman coupling and the s-d exchange interaction between the carriers and the magnetic ions. We have obtained an analytical expression for the electron energy spectrum, which depends on the magnetic ion concentration, temperature, and strength of magnetic field. By using the obtained energy spectrum, we calculated the electron effective g*-factor. We have found that effective g*-factor increases when the magnetic field increases; by increasing the strength of spin-orbit interaction, the electron g*-factor decreases and by increasing the temperature, the electron g*-factor increases.

An oxide-diluted magnetic semiconductor: Mn-doped ZnO

1999 ◽  
Vol 75 (21) ◽  
pp. 3366-3368 ◽  
Author(s):  
T. Fukumura ◽  
Zhengwu Jin ◽  
A. Ohtomo ◽  
H. Koinuma ◽  
M. Kawasaki
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Mn Doped
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