Interaction of Interstitial Copper with Isolated Vacancies in Silicon

2015 ◽  
Vol 242 ◽  
pp. 308-311 ◽  
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Direct Reaction ◽  
Radiation Defects ◽  
Standard Spectrum ◽  
Temperature Irradiation ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation in oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the room-temperature irradiation creates a large amount of CuPL centers (complexes including one substitutional and three interstitial Cu atoms). The analysis shows that this process is govern by formation of the substitutional copper atoms due to the direct reaction between irradiation-induced vacancies and mobile Cui species. This reaction consumes nearly all irradiation-induced vacancies and affects strongly the standard spectrum of radiation defects.

Interstitial Carbon in p-Type Copper-Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 302-307
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Lower Half ◽  
Interstitial Carbon ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (Ci), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cui, Ci} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the Ci species.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

scholarly journals Formation and annealing of radiation defects in silicon, implanted with hydrogen ions

2019 ◽  
pp. 68-72
Author(s):  
Alexei V. Giro ◽  
Yuri M. Pokotilo ◽  
Alla N. Petukh
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Initial Level ◽  
Deep Level ◽  
Radiation Defects ◽  
Hydrogen Ions ◽  
Epitaxial Silicon ◽  
Hydrogen Atoms ◽  
Transient Spectroscopy ◽  
Isolated Point

Energy spectrum of radiation defect levels in n-type epitaxial silicon irradiated with 300 keV hydrogen ions was studied by DLTS (deep level transient spectroscopy) method. The increase in the amplitude of DLTS peak with the increase in the temperature of its registration was found. This indicates the formation of areas of defects accumulation with displacement density lower initial level of doping. After exposure of irradiated samples at room temperature for several months, these areas decay with isolated point A-, E-centers and hydrogen defects with an Ec – 0.31 eV level formation. It is shown that complexes with an Ec – 0.31 eV level are formed by attaching hydrogen atoms to A-center. At Т > 150 °С, this defect begins to anneal, and at the same time A-center concentration is increased.

Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

2004 ◽  
Vol 815 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
G. C. Farlow ◽  
M. A. Capano
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Annealing Behavior ◽  
Argon Ions ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Post Implantation

AbstractArgon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

2007 ◽  
Vol 556-557 ◽  
pp. 331-334 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Charge State ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Annealing Stage ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

The authors have investigated deep levels in electron-irradiated n- and p-type 4H-SiC epilayers by deep level transient spectroscopy (DLTS). By low-energy electron irradiation at 116 keV, the Z1/2 and EH6/7 concentrations are increased in n-type samples, and the concentrations are almost unchanged after annealing at 950°C for 30 min. In p-type samples, the unknown centers, namely EP1 and EP2, are introduced by irradiation. By annealing at 950°C, the unknown centers are annealed out. The HK4 center (EV + 1.44 eV) is increased by the electron irradiation and subsequent annealing at 950°C. The dependence of increase in the trap concentrations by irradiation (NT) on the electron fluence reveals that NT for the Z1/2 and EH6/7 centers is in proportional to the 0.7 power of electron fluence, while the slope of the plot is 0.5 for the HK4 center. The Z1/2 and EH6/7 centers show similar annealing stage and are thermally stable up to 1500-1600°C, while the HK4 center is annealed out at about 1350°C. The Z1/2 and EH6/7 centers may be derived from a same origin (single carbon vacancy: VC) but different charge state. The HK4 center may be a complex including VC.

scholarly journals Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

1998 ◽  
Vol 510 ◽  
Author(s):  
Min Gong ◽  
C. D. Beling ◽  
S. Fung ◽  
G. Brauer ◽  
H. Wirth ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Heavy Ion ◽  
Deep Levels ◽  
Hole Trap ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractTwo deep levels, located at Ev+0.26eV and Ec-0.44eV, in Al-implanted n-type samples and one at Ev+0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

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