Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

2004 ◽  
Vol 815 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
G. C. Farlow ◽  
M. A. Capano
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Annealing Behavior ◽  
Argon Ions ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Post Implantation

AbstractArgon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

Interaction of Interstitial Copper with Isolated Vacancies in Silicon

2015 ◽  
Vol 242 ◽  
pp. 308-311 ◽  
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Direct Reaction ◽  
Radiation Defects ◽  
Standard Spectrum ◽  
Temperature Irradiation ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation in oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the room-temperature irradiation creates a large amount of CuPL centers (complexes including one substitutional and three interstitial Cu atoms). The analysis shows that this process is govern by formation of the substitutional copper atoms due to the direct reaction between irradiation-induced vacancies and mobile Cui species. This reaction consumes nearly all irradiation-induced vacancies and affects strongly the standard spectrum of radiation defects.

Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS

2011 ◽  
Vol 178-179 ◽  
pp. 366-371
Author(s):  
Łukasz Gelczuk ◽  
Maria Dabrowska-Szata ◽  
Mariusz Sochacki ◽  
Jan Szmidt
Keyword(s):  
Ion Implantation ◽  
Line Shape ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Double Peak ◽  
Implantation Process ◽  
Transient Spectroscopy

Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N and grown on standard n+4H-SiC substrates were exposed to aluminium ion implantation process under the Schottky contact and of junction termination extension (JTE). The studies performed within 80-400 K temperature range revealed five deep electron traps, with a dominant double peak at around room temperature related to the Z1/Z2 defect. The thorough analysis of the DLTS-line shape and DLTS-line behaviour on DLTS measurement conditions made possible to distinguish and identify all the observed deep levels.

Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide

2002 ◽  
Vol 742 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
M. A. Capano
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Defect Levels ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Implanted Devices

ABSTRACTAluminum (Al) and argon (Ar) ions were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV at a dose of 2 × 1016 cm-2. After annealing at 1600 °C for 5–60 minutes, Schottky diodes were fabricated on the ion implanted samples. Deep Level Transient Spectroscopy (DLTS) was used to characterize ion implantation induced defects. A defect at EC-0.18 eV was observed in the Al+ implanted devices annealed for five and fifteen minutes. However, annealing for 30 minutes produced an additional deeper defect at EC -0.24 eV. This defect annealed out after a sixty minute anneal. DLTS studies of Ar+ implanted devices showed six defect levels at EC -0.18 eV, EC -0.23 eV, EC -0.31 eV, EC -0.38eV, EC -0.72 eV, and EC -0.81eV. These defects are attributed to intrinsic-related defects. It is suggested that “hot” implantation of Al+ inhibits the formation of intrinsic-related defects. While “hot” implantation of Ar+ into 4H-SiC does not reduce the concentration of the vacancies and interstitials.

Interstitial Carbon in p-Type Copper-Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 302-307
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Lower Half ◽  
Interstitial Carbon ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (Ci), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cui, Ci} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the Ci species.

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

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