Growth and Characterization of Titanium Doped Lithium Niobate Single Crystal Using Czochralski Technique

2017 ◽  
Vol 268 ◽  
pp. 205-209
Author(s):  
K.Z. Hashim ◽  
Md Supar Rohani ◽  
Wan Hairul Anuar Kamaruddin
Keyword(s):  
Lithium Niobate ◽  
Single Crystal ◽  
Growth Parameters ◽  
Visible Region ◽  
Fundamental Absorption Edge ◽  
Czochralski Method ◽  
Effective Control ◽  
Vis Spectroscopy ◽  
Growth System ◽  
The Right

A successful growth of the titanium-doped lithium niobate (Ti: LiNbO3) single crystal by Czochralski method is reported. By preserving an effective control of growth parameters such as maintaining accurate temperature gradient by controlling its output power and growth rate as well as wisely choosing the right pulling rate and speed rotation, the Ti:LiNbO3 single crystal successfully produced using Automatic Diameter Control-Crystal Growth System (ADC-CGS). The structural and optical analyses have been done by using X-ray Diffractometer (XRD), Differential Thermal Analyzer (DTA) and Ultraviolet-Visible (UV-Vis) spectroscopy. The crystallinity of the sample has been confirmed using XRD and DTA has been used to determine the crystal nature of the sample. The position of fundamental absorption edge was recorded via transmission spectra in UV and visible region.

Growth and Magneto-Optical Properties of CaTbAlO4 Crystal

2011 ◽  
Vol 306-307 ◽  
pp. 1722-1727 ◽  
Author(s):  
Man Mei ◽  
Li Li Cao ◽  
Yan He ◽  
Ru Ru Zhang ◽  
Fei Yun Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
Room Temperature ◽  
Near Infrared ◽  
Visible Region ◽  
Czochralski Method ◽  
Optical Devices ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Spectral

The calcium terbium aluminate (CaTbAlO4) single crystal was grown by Czochralski method successfully for the first time.The structure of the crystal was determined by X-ray diffraction analysis.The transmission spectrum of the crystal was measured at room temperature at the wavelength of 400-1500nm.The specific Faraday rotation of the single crystal was surveyed at room temperature at the wavelength 532nm, 633nm, and 1064nm respectively.The Verdet constants of the CaTbAlO4 crystal are calculated and the results show that the Verdet constants of CaTbAlO4 are around 110% higher than that of TGG in the visible and near-infrared spectral region.Therefore,crystal CaTbAlO4 can be promising material for the fabrication of magneto-optical devices in the visible region.

Effect of New Thermal Insulation to the Growth of LiNbO3 Single Crystal by Czochralski Method

2013 ◽  
Vol 701 ◽  
pp. 108-112
Author(s):  
W.H.A. Kamaruddin ◽  
Hamdan Hadi Kusuma ◽  
Zuhairi Ibrahim
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Thermal Insulation ◽  
Growth Process ◽  
Thermal Environment ◽  
Czochralski Method ◽  
Control Power ◽  
Air Atmosphere ◽  
Growth System ◽  
Hot Zone

Single crystal of LiNbO3has been successfully grown by the Czochralski method in an air atmosphere with a r.f heating crystal growth system namely Automatic Diameter Control Crystal Growth System (ADC-CGS). This paper reports on the effect of new thermal insulation on the growth process of LiNbO3single crystal. The effect of hot zone thermal insulation design was investigated. The conditions required to grow high quality LiNbO3single crystals are described. A set of crystal growth processes were conducted with the rotation rate of the seed at 15 rpm and the pulling rate at 2.0 mm/hr kept constant. All of the runs were grown along <104> orientation. To control the diameter of the crystal, we have to alter the thermal environment inside the hot zone. In other words, during the crystal growth we have to increase the control power to get smaller diameter and decrease the control power to get larger diameter.

Growth and Characteristics of Single Crystals of Lithium Niobate

2002 ◽  
Vol 747 ◽  
Author(s):  
A. K. Batra ◽  
T. Gebre ◽  
J. Stephens ◽  
M. D. Aggarwal ◽  
R. B. Lal
Keyword(s):  
Lithium Niobate ◽  
Single Crystals ◽  
Frequency Conversion ◽  
Growth Parameters ◽  
Optical Switches ◽  
Entire System ◽  
Optical Modulators ◽  
Growth System ◽  
Optical Applications ◽  
Mn Doped

ABSTRACTLithium niobate single crystal is an excellent material for various optical applications such as frequency conversion, optical switches, optical modulators and others. An automatic diameter control Czochralski crystals growth system has been designed and fabricated. A brief description of the entire system along with software developed has been described. With optimized growth parameters, pure and Fe/Mn doped crystals have been successfully grown using this system. Preliminary characterizations of these crystals have also been presented.

scholarly journals Effect of Internal Radiation on Process Parameters in the Global Simulation of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 763
Author(s):  
Xia Tang ◽  
Botao Liu ◽  
Yue Yu ◽  
Botao Song ◽  
Pengfei Han ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Single Crystal ◽  
Process Parameters ◽  
Czochralski Method ◽  
Surface Radiation ◽  
Czochralski Growth ◽  
Internal Radiation ◽  
System A ◽  
Large Size ◽  
Growth System

As a crystal grows, the temperature distribution of the crystal and melt will change. It is necessary to study the dynamic process of single-crystal growth. Due to the relatively low crystallization rates used in the industrial Czochralski growth system, a steady state is used to compute the temperature distribution and melt flow. A two-dimensional axisymmetric model of the whole Czochralski furnace was established. The dynamic growth process of large-size bulk β-Ga2O3 single crystal using the Czochralski method has been numerically analyzed with the parameter sweep method. In this paper, two cases of internal radiation and no internal radiation were compared to study the effect of radiation on the process parameters. The temperature distribution of the furnace, the temperature field, and the flow field of the melt was calculated. The temperature, the temperature gradient of the crystal, the temperature at the bottom of the crucible, and the heater power were studied for the crystals grown in the two cases of radiation. The results obtained in this study clearly show that the loss calculated by including the internal radiation is higher compared to that including the surface radiation.

The growth and characterization of six inch lithium niobate crystals with high homogeneity

CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 794-801 ◽  
Author(s):  
Shuai Wang ◽  
Cheng Ji ◽  
Peng Dai ◽  
Liming Shen ◽  
Ningzhong Bao
Keyword(s):  
Control System ◽  
Temperature Gradient ◽  
Lithium Niobate ◽  
Growth Parameters ◽  
Large Diameter ◽  
Czochralski Method ◽  
High Homogeneity ◽  
Suitable Temperature ◽  
Lithium Niobate Crystals

On a self-designed automatic diameter control system, large diameter (6 inch) LiNbO3 crystals without cracks are successfully grown by choosing a suitable temperature gradient, starting composition, and growth parameters with the Czochralski method.

Single crystal growth of Ga 3 Ni 2 by the Czochralski method

2016 ◽  
Vol 449 ◽  
pp. 114-118 ◽  
Author(s):  
Magdalena Wencka ◽  
Mirtha Pillaca ◽  
Peter Gille
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Czochralski Method ◽  
Single Crystal Growth

Interdomain region in single-crystal lithium niobate bimorph actuators produced by light annealing

2015 ◽  
Vol 60 (5) ◽  
pp. 700-705 ◽  
Author(s):  
I. V. Kubasov ◽  
M. S. Timshina ◽  
D. A. Kiselev ◽  
M. D. Malinkovich ◽  
A. S. Bykov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Single Crystal ◽  
Bimorph Actuators

InSb Czochralski Growth Single Crystals for InGaSb Substrates

2014 ◽  
Vol 1616 ◽  
Author(s):  
J. E. Flores Mena ◽  
R. Castillo Ojeda ◽  
J. Díaz Reyes
Keyword(s):  
Low Cost ◽  
Electronic Devices ◽  
Czochralski Method ◽  
Liquid Nitrogen Temperature ◽  
Longitudinal Optical ◽  
Czochralski Growth ◽  
Etch Pit ◽  
Growth System ◽  
Radiation Sensors ◽  
Made In

ABSTRACTThe massive crystal growth of single crystal semiconductors materials has been of fundamental importance for the actual electronic devices industry. As a consequence of this one, we can obtain easily a large variety of low cost devices almost as made ones of silicon. Nowadays, the III-V semiconductors compounds and their alloys have been proved to be very important because of their optical properties and applications. It is the case of the elements In, Ga, As, Sb, which can be utilized for the fabrication of radiation sensors. In this work we present the results obtained from the ingots grown by the Czochralski method, using a growth system made in home. These results include anisotropic chemical attacks in order to reveal the crystallographic orientation and the possible polycrystallinity. Isotropic chemical attacks were made to evaluate the etch pit density. Metallographic pictures of the chemical attacks are presented in this work. Among the results of these measurements, the best samples presented in this work showed mobilities of 62.000 cm2/V*s at room temperature and 99.000 cm2/V*s at liquid nitrogen temperature. Typical pit density was 10,000/cm2. The Raman spectra present two dominant peaks associated at Transversal Optical (TO)- and Longitudinal Optical (LO)-InSb, the first vibrational mode is dominant due to the crystalline direction of the ingots and second one is associated to high defects density.

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