scholarly journals Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

2019 ◽  
Vol 290 ◽  
pp. 137-141
Author(s):  
Nurul Atikah Mohd Isa ◽  
Sha Shiong Ng ◽  
Zainuriah Hassan

In this study, aluminum nitride (AlN) thin films were grown on p-type silicon (100) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared, namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 °C for 60 min. The surface morphology and structural properties of the deposited AlN thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD results revealed that both samples have AlN (100) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared to the sample prepared with DEA. While, the AFM results showed that both samples have uniform and smooth surface. The optical properties of AlN thin films was investigated by Raman spectroscopy. For sample without DEA, Raman results showed the present of wurtzite AlN characteristics phonon modes of E2(high) and A1(LO) at 660 cm-1 and 892 cm-1, respectively. Whereas only E2(high) is observed for sample with the aid of DEA. Finally, all the results revealed that the present of DEA has a strong influence on the properties of deposited AlN thin films and film prepared without DEA have better quality.

2016 ◽  
Vol 675-676 ◽  
pp. 241-244 ◽  
Author(s):  
Tanattha Rattana ◽  
Sumetha Suwanboon ◽  
Chittra Kedkaew

Ni-doped ZnO thin films were prepared on glass slide substrates by a sol-gel dip coating method with different Ni doping concentrations (0-33 mol%). The effect of Ni doping concentration on structural, surface morphology and optical properties of the thin films was characterized by XRD, FESEM and UV-Vis spectrophotometer. The XRD results indicated that pure ZnO thin film exhibited a hexagonal wurtzite structure. Ni (OH)2 phase were observed at a high Ni doping concentration. The FESEM images showed that the surface morphology and surface roughness were sensitive to the Ni doping concentration. The optical transmission measurements were observed that the transmittance decreased with increasing the Ni doping concentration.


2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Serif Ruzgar ◽  
Yasemin Caglar ◽  
Ozgur Polat ◽  
Dinara Sobola ◽  
Mujdat Caglar

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