Silicon Surface Cleaning after Spacer Dry Etching

2001 ◽  
Vol 76-77 ◽  
pp. 303-306 ◽  
Author(s):  
Denis Shamiryan ◽  
Mikhail R. Baklanov ◽  
Serge Vanhaelemeersch
Keyword(s):  
Silicon Surface ◽  
Dry Etching ◽  
Surface Cleaning

Silicon Surface Cleaning for Low Temperature Epitaxial Growth

1993 ◽  
Vol 315 ◽  
Author(s):  
John O. Borland ◽  
Carol Riggi ◽  
Faye Brocious
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Formation of ultralow-reflectance silicon surface by dry etching

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DR07
Author(s):  
Li Zhang ◽  
Fang Yang ◽  
Jun He ◽  
Xian Huang ◽  
Dacheng Zhang
Keyword(s):  
Silicon Surface ◽  
Dry Etching

Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth

2001 ◽  
Vol 226 (4) ◽  
pp. 443-450 ◽  
Author(s):  
Takumi Nakahata ◽  
Kazuma Yamamoto ◽  
Junji Tanimura ◽  
Toru Inagaki ◽  
Taisuke Furukawa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Dry Etching ◽  
Surface Cleaning ◽  
Thermal Budget ◽  
Low Thermal Budget

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

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