Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller
Keyword(s):  
Hydrogen Plasma ◽  
Auger Spectroscopy ◽  
Surface Roughening ◽  
Rf Power ◽  
Plasma Exposure ◽  
Argon Plasmas ◽  
Etch Rates ◽  
Phosphorus Depletion ◽  
Oxygen Impurities

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

Hydrogen Plasma Treatment of Silicon Dioxide for Improved Silane Deposition

Langmuir ◽  
2013 ◽  
Vol 29 (11) ◽  
pp. 3604-3609 ◽  
Author(s):  
Vipul Gupta ◽  
Nitesh Madaan ◽  
David S. Jensen ◽  
Shawn C. Kunzler ◽  
Matthew R. Linford
Keyword(s):  
Silicon Dioxide ◽  
Plasma Treatment ◽  
Hydrogen Plasma

Influence of flow parameters in the dual nozzle CO2-based vortex tube cooling system during turning of Ti-6Al-4V

2021 ◽  
pp. 095440622110574
Author(s):  
Khirod Mahapatro ◽  
P Vamsi Krishna
Keyword(s):  
Surface Roughness ◽  
Cutting Force ◽  
Vortex Tube ◽  
Cooling System ◽  
Cutting Temperature ◽  
Nozzle Diameter ◽  
Energy Separation ◽  
Optimum Conditions ◽  
Dry Cutting ◽  
Input Variables

Dual nozzle vortex tube cooling system (VTCS) is developed to improve the machinability of Ti-6Al-4V where cold-compressed CO2 gas is used as a coolant. The cooling effect is produced by the process of energy separation in the vortex tube and the coolant is supplied into the machining zone to remove the generated heat in machining. In this study, the responses such as cutting force (Fz), cutting temperature (Tm), and surface roughness (Ra) are analyzed by considering coolant inlet pressure, cold fraction, and nozzle diameter as input variables. Further optimization is performed for the input variables using the genetic algorithm technique, and the results at optimum conditions are compared with those of dry cutting. From the results, lower cutting force is observed at lower coolant pressure and cold fraction and higher nozzle diameter. The cutting temperature is minimized by increasing coolant pressure and cold fraction and by decreasing nozzle diameter. A better surface finish is observed at high coolant pressure and cold fraction and lower nozzle diameters. It is observed from the response surface method (RSM) that the coolant pressure is most significantly affecting all the responses. At optimum conditions, the cutting temperature and surface roughness are 35.6% and 66.14%, respectively, lower than dry cutting due to the effective cooling and lubricating action of the CO2 gas, whereas cutting force observed under the VTCS is 18.6% higher than that of dry cutting because of the impulse force of the coolant VTCS and thermal softening of the workpiece in dry cutting.

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