Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

The Influence of Wafer Cleaning Process on the Silicon Surface Roughness

2015 ◽  
Vol 1109 ◽  
pp. 262-265
Author(s):  
S. Norhafiezah ◽  
R.M. Ayub ◽  
Mohd Khairuddin Md Arshad ◽  
A.H. Azman ◽  
M.A. Farehanim ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Cleaning Procedure ◽  
Acidic Solutions ◽  
Wafer Cleaning ◽  
Semiconductor Fabrication

The cleaning process of the silicon wafer becomes one of the most important procedures in semiconductor fabrication. It is acknowledged to remove the contamination on the wafer surface as well as to promote an acceptable surface roughness, prior to performing various deposition methods. The wafer cleaning process which based on hot alkaline and acidic solutions is known as the RCA cleaning. The RCA is still the most important wafer cleaning method used in wafer fabrication industry. In this paper, the effects of various cleaning procedure to the silicon wafer surface roughness are measured using AFM. Subsequently, an optimum cleaning recipe is discussed and proposed.

Direct Observation of Crystal-Originated Particles on Czochralski-Grown Silicon Wafer Surface and Effect on Gate Oxide Reliability

1996 ◽  
Vol 35 (Part 2, No. 11A) ◽  
pp. L1385-L1387 ◽  
Author(s):  
Hiroyuki Ishii ◽  
Shigeru Shiratake ◽  
Kazuhiro Oka ◽  
Kaoru Motonami ◽  
Toru Koyama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Direct Observation ◽  
Gate Oxide ◽  
Wafer Surface ◽  
Oxide Reliability ◽  
Silicon Wafer Surface

The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

Characterization of Crystal Quality by Crystal Originated Particle Delineation and the Impact on the Silicon Wafer Surface

1998 ◽  
Vol 145 (1) ◽  
pp. 275-284 ◽  
Author(s):  
D. Gräf ◽  
M. Suhren ◽  
U. Lambert ◽  
R. Schmolke ◽  
A. Ehlert ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Crystal Quality ◽  
Wafer Surface ◽  
Silicon Wafer Surface ◽  
The Impact
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