Silicon Interposers Enable High Performance Capacitors

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001996-002010
Author(s):  
Sergey Savastiouk ◽  
Phil Marcoux ◽  
Jim Hewlett
Keyword(s):  
Thin Film ◽  
Power Supply ◽  
High Performance ◽  
Electrical Performance ◽  
High Frequencies ◽  
Embedded Capacitors ◽  
Thin Film Capacitors ◽  
Parallel Resonance ◽  
Very High Frequencies ◽  
Very High

Thin film capacitors without TSVs have been used previously. However, with the interconnect inductance being high, benefits of thin film capacitors have not been fully realized. TSV interposers with embedded capacitors provide the shortest electrical path between devices and power supply decoupling capacitors. TSVs with their very low inductance interconnects thus will enable very high electrical performance when integrated with embedded thin film capacitors. ALLVIA, on behalf of it's foundry customers, has been conducting studies of various capacitors on silicon interposers. The data presented in this paper shows after several thermal cycles that planar capacitors on silicon results in stable, reliable capacitors operating at very high frequencies. Unlike an issue of parallel resonance seen with chip capacitors, planar capacitors in interposers don't exhibit this property.

scholarly journals Evaluation of Meshed Reference Planes for High Performance Applications

2000 ◽  
Vol 22 (3) ◽  
pp. 175-187 ◽  
Author(s):  
N. D. Codreanu ◽  
P. Svasta ◽  
V. Golumbeanu ◽  
L. Gál
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Network Analyzer ◽  
High Frequencies ◽  
High Speeds ◽  
University Of Budapest ◽  
Very High Frequencies ◽  
Very High

The actual generations of integrated circuits are characterized, inter alia, by very high frequencies or very high speeds. The dramatic evolution ofthe semiconductor's technology establishes a greater “pressure” to the design and the manufacturing of the passive interconnection structure from PCB/MCM electronic modules. In these conditions the reference planes (power and ground planes) have a more and more important contribution. The paper intents to present the effect of different configuration reference planes on the characteristics of the high speed/high frequency interconnection lines. The first part deals with modeling and simulation of usual practical interconnection geometries. A computer modeling of meshed structures was realized and Spice models for a good compatibility with circuit simulators were obtained.S-,Y-,Z- parameters and radiation patterns were calculated, too. The second part contains measurements made by a vector network analyzer as regards to different practical configurations manufactured at Technical University of Budapest.

scholarly journals Microcrystalline silicon thin-film transistors operating at very high frequencies

2010 ◽  
Vol 97 (7) ◽  
pp. 073502 ◽  
Author(s):  
Marko Marinkovic ◽  
Elias Hashem ◽  
Kah-Yoong Chan ◽  
Aad Gordijn ◽  
Helmut Stiebig ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
High Frequencies ◽  
Very High Frequencies ◽  
Very High

Correction factors for slotted measuring lines at very high frequencies

1950 ◽  
Vol 1950 (8) ◽  
pp. 216-216
Author(s):  
R.G. Medhurst ◽  
S.D. Pool
Keyword(s):  
Correction Factors ◽  
High Frequencies ◽  
Measuring Lines ◽  
Very High Frequencies ◽  
Very High

An ammeter for very high frequencies

1930 ◽  
Vol 68 (401) ◽  
pp. 556-559
Author(s):  
C.L. Fortescue ◽  
L.A. Moxon
Keyword(s):  
High Frequencies ◽  
Very High Frequencies ◽  
Very High

scholarly journals Idiotypic analysis of potential and available repertoires in the arsonate system.

1984 ◽  
Vol 160 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M Slaoui ◽  
O Leo ◽  
J Marvel ◽  
M Moser ◽  
J Hiernaux ◽  
...  
Keyword(s):  
Monoclonal Antibody ◽  
B Cells ◽  
Keyhole Limpet Hemocyanin ◽  
High Frequencies ◽  
Specific Subset ◽  
A Minor ◽  
Very High Frequencies ◽  
Very High ◽  
Limiting Dilution

We have shown that, by suitable idiotypic manipulation, BALB/c mice can express the major cross-reactive idiotype (CRI) of A/J mice in response to azophenylarsonate (Ars). In order to know if the CRIA idiotype is present in the potential repertoire of BALB/c before any intentional selection, we used polyclonal activation in vitro and limiting dilution analysis. The readout was done with two monoclonal anti-CRIA antibodies that recognize distinct idiotopes on a CRIA+ A/J germline-encoded monoclonal antibody. We studied the frequency of CRIA+ lipopolysaccharide (LPS)-reactive cells in the spleens of nonimmune and immune A/J mice and in the spleens of naive and manipulated (i.e., producing CRIA+ antibodies) BALB/c mice. A/J and BALB/c naive individuals presented very high frequencies of Ars-specific B cells while the frequency of CRIA+ B cells was only a minor subset (0.5%) of the total Ars-specific subset in the two strains. When A/J mice were immunized with Ars-keyhole limpet hemocyanin, a clear preferential expansion of the CRIA+ minor subset of A/J mice was observed (100x). No such enhancement was observed in BALB/c mice similarly treated. Manipulated BALB/c mice presented a higher frequency of CRIA+ anti-Ars B cells than naive or antigen-immunized BALB/c individuals.

A Genetically Marked I Element in Drosophila melanogaster Can Be Mobilized When ORF2 Is Provided in trans

Genetics ◽  
1998 ◽  
Vol 148 (1) ◽  
pp. 267-275
Author(s):  
Isabelle Busseau ◽  
Sophie Malinsky ◽  
Maria Balakireva ◽  
Marie-Christine Chaboissier ◽  
Danielle Teninges ◽  
...  
Keyword(s):  
Drosophila Melanogaster ◽  
Heat Shock ◽  
Reverse Transcriptase ◽  
Germ Line ◽  
Ltr Retrotransposons ◽  
Low Frequencies ◽  
High Frequencies ◽  
In Trans ◽  
Very High Frequencies ◽  
Very High

Abstract I factors in Drosophila melanogaster are non-LTR retrotransposons similar to mammalian LINEs. They transpose at very high frequencies in the germ line of SF females resulting from crosses between reactive females, devoid of active I factors, and inducer males, containing active I factors. The vermilion marked IviP2 element was designed to allow easy phenotypical screening for retrotransposition events. It is deleted in ORF2 and therefore cannot produce reverse transcriptase. IviP2 can be mobilized at very low frequencies by actively transposing I factors in the germ line of SF females. This paper shows that IviP2 can be mobilized more efficiently in the germ line of strongly reactive females in the absence of active I factors, when it is trans-complemented by the product of ORF2 synthesized from the hsp70 heat-shock promoter. This represents a promising step toward the use of marked I elements to study retrotransposition and as tools for mutagenesis.

scholarly journals Field Measurements of Dielectric Absorption in Antarctic Ice and Snow at Very High Frequencies

1968 ◽  
Vol 7 (49) ◽  
pp. 89-94 ◽  
Author(s):  
M. E. R. Walford
Keyword(s):  
Impurity Content ◽  
Field Measurements ◽  
Relaxation Mechanism ◽  
Absorption Bands ◽  
High Frequencies ◽  
Dielectric Absorption ◽  
Antarctic Snow ◽  
Radio Frequencies ◽  
Very High Frequencies ◽  
Very High

AbstractField measurements are presented of dielectric absorption in Antarctic snow and ice at frequencies of a few hundred megahertz. They are compared with measurements by other authors at very high frequencies. The dielectric absorption in ice at these frequencies is accounted for in terms of absorption bands both at radio frequencies and in the infrared. Bands at radio frequencies are caused by a relaxation mechanism which depends upon the temperature and the impurity content of the ice. These two factors are therefore included in an account of the dielectric absorption in ice at very high frequencies.

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