Aluminum Wedge-Wedge Bonding Using Capillary and Ball Bonder

2017 ◽  
Vol 2017 (1) ◽  
pp. 000444-000450
Author(s):  
Sarangapani Murali ◽  
Ei Phyu Phyu Theint ◽  
Hamdan Faizul Fitri ◽  
Tan Kean Tiong ◽  
Zhang Xi
Keyword(s):  
Gold Plating ◽  
Fine Ceramic ◽  
Cu Metallization ◽  
High Temperature Storage ◽  
Bonding Wires ◽  
Tensile Data ◽  
Substrate Surfaces ◽  
Wedge Bonding ◽  
Bare Copper ◽  
Temperature Storage

Abstract The paper discusses on the bondability and reliability of aluminum (Al) wedge-to-wedge bonding using fine ceramic capillary and ball bonder. Initial trials revealed aluminum build-up and poor capillary life with touch down of 20K or less. Optimizing the process parameters, switching on air-scrub, reducing shape angle to 20° instead of usual 35° and using Al-1wt%Si wire processed with refined grains revealed better capillary life with touch down of 200K without surface burrs. The method is capable of bonding complex looping and sharp acute bends. The data comprising of 1st and 2nd wedge dimensions, wedge pull, wedge shear and fracture mode for 20μm and 50μm Al-1wt%Si wires are presented. High temperature storage of aluminum wedge bonding to different substrate surfaces such as Al-0.5wt%Cu metallization, bare copper and gold plating revealed stable bond. From the wedge pull and tensile data, floor and shelf life of the wire is recommended to be 7days and 6months respectively. Evaluation of gold, copper and silver base bonding wires by this method showed feasible to bond and needs detailed studies to practice. The fusing current of Al-1wt%Si wire for varying diameter from 0.6 to 3mil and wire length from 1 to 20mm are also stated.

High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

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