scholarly journals Surface and interface characterization for adhesion of films.

1986 ◽  
Vol 37 (9) ◽  
pp. 430-439 ◽  
Author(s):  
Shigeyoshi MAEDA
Keyword(s):  
Interface Characterization ◽  
Surface And Interface

Surface and Interface Characterization of Asphaltenic Fractions Obtained with Different Alkanes: A Study by Atomic Force Microscopy and Pendant Drop Tensiometry

2018 ◽  
Vol 32 (12) ◽  
pp. 12174-12186 ◽  
Author(s):  
Iago Oliveira ◽  
Larissa Gomes ◽  
Elton Franceschi ◽  
Gustavo Borges ◽  
Juliana F. de Conto ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Pendant Drop ◽  
Force Microscopy ◽  
Interface Characterization ◽  
Surface And Interface ◽  
Atomic Force

Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

2019 ◽  
Vol 963 ◽  
pp. 189-193 ◽  
Author(s):  
Alexander Savtchouk ◽  
Marshall Wilson ◽  
Carlos Almeida ◽  
Dmitriy Marinskiy ◽  
Robert Hillard ◽  
...  
Keyword(s):  
Direct Method ◽  
Wide Bandgap ◽  
Power Devices ◽  
Electrical Parameters ◽  
Interface Characterization ◽  
Surface And Interface ◽  
Self Consistent ◽  
Flatband Voltage ◽  
Bandgap Semiconductors ◽  
Consistent Measurement

The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

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