Thermal Stability of β-Amylase Activity and Sugar Profile of Sweet Potato Varieties during Processing

The effect of temperature on pancreatic amylase was studied on three species of reptiles and one amphibian. Pancreata were removed from the animals, homogenized, and assayed for amylase activity by the Caraway procedure. Assays were conducted at various temperatures to determine the optimum temperature of activity and the maximum temperature for thermal stability of pancreatic amylase. It appears that between reptiles and amphibians, and also among species of reptiles, there are thermally dependent differences at the subcellular level which are similar to the differences in the preferred temperatures of the animals.

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Identification and thermal stability of purple-fleshed sweet potato anthocyanins in aqueous solutions with various pH values and fruit juices

Food Chemistry ◽

10.1016/j.foodchem.2012.09.054 ◽

2013 ◽

Vol 136 (3-4) ◽

pp. 1429-1434 ◽

Cited By ~ 80

Author(s):

Jie Li ◽

Xiao-ding Li ◽

Yun Zhang ◽

Zheng-dong Zheng ◽

Zhi-ya Qu ◽

...

Keyword(s):

Thermal Stability ◽

Aqueous Solutions ◽

Sweet Potato ◽

Fruit Juices ◽

Ph Values ◽

Thermal Stability Of

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Effects of low acyl and high acyl gellan gum on the thermal stability of purple sweet potato anthocyanins in the presence of ascorbic acid

Food Hydrocolloids ◽

10.1016/j.foodhyd.2018.03.007 ◽

2019 ◽

Vol 86 ◽

pp. 116-123 ◽

Cited By ~ 19

Author(s):

Xue-Jiao Xu ◽

Sheng Fang ◽

Yan-Hua Li ◽

Fan Zhang ◽

Zhi-Peng Shao ◽

...

Keyword(s):

Thermal Stability ◽

Ascorbic Acid ◽

Sweet Potato ◽

Gellan Gum ◽

Purple Sweet Potato ◽

Thermal Stability Of

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Cooking Treatment Effects on Sugar Profile and Sweetness of Eleven-Released Sweet Potato Varieties

Journal of Food Processing & Technology ◽

10.4172/2157-7110.1000580 ◽

2016 ◽

Vol 07 (04) ◽

Cited By ~ 2

Author(s):

Owusu Mensah E ◽

Oduro I

Keyword(s):

Sweet Potato ◽

Treatment Effects ◽

Potato Varieties ◽

Sugar Profile

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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