scholarly journals Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

2013 ◽  
Vol 04 (05) ◽  
pp. 616-621 ◽  
Author(s):  
A. Guen-Bouazza ◽  
C. Sayah ◽  
B. Bouazza ◽  
N. E. Chabane-Sari
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Simulation Analysis

MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETER InP AND GaAsn+–i(n)–n+ DIODE

2010 ◽  
Vol 24 (06) ◽  
pp. 549-560 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. REZAEE ROKN-ABADI ◽  
F. BADIEIAN BAGHSIAHI ◽  
M. R. KHALVATI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Anode Voltage ◽  
Electronic States ◽  
Electron Velocity ◽  
Back Scattering ◽  
Simulation Results ◽  
Average Electron

Monte Carlo simulation of electron transport in an InP diode of n+–i(n)–n+ structure is compared with GaAs diode. The anode voltage ranges from 0.5 to 1.5 V. The distributions of electron energies and electron velocities and the profiles of the electron density, electric field and potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 μm-long diode and the importance of the back-scattering of electrons from the anode n+-layer are discussed. In addition, the effects of the lattice temperature and doping on the length of the active layer are discussed. Electronic states within the conduction band valleys at the Γ, L, and X are represented by non-parabolic ellipsoidal valleys centered on important symmetry points of the Brillouin zone. Our simulation results have also shown that the electron velocity characteristics in InP diode are more sensitive to temperature than in other III–V semiconductors such as GaAs .

Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis

2020 ◽  
Vol 128 (18) ◽  
pp. 185704
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Boron Nitride ◽  
Simulation Analysis ◽  
Cubic Boron Nitride

COMPARISON OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE AND ZINCBLENDE PHASE GaN AT ROOM TEMPERATURE

2007 ◽  
Vol 21 (04) ◽  
pp. 199-206 ◽  
Author(s):  
H. ARABSHAHI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
High Field ◽  
Room Temperature ◽  
Electronic States ◽  
Ensemble Monte Carlo ◽  
Ensemble Monte Carlo Simulation ◽  
Electron Transport Properties

An ensemble Monte Carlo simulation has been used to model bulk electron transport at 300 K for both the natural wurtzite and the zincblende lattice phases of GaN . Electronic states within the conduction band are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone, but for zincblende GaN , the simpler spherical parabolic band approximation has also been tested, for comparison. In the case of wurtzite GaN , transport has been modeled with an electric field applied both parallel and perpendicular to the (0001) c-axis. The steady state velocity-field characteristics are in fair agreement with other recent calculations.

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

2001 ◽  
Vol 48 (3) ◽  
pp. 535-542 ◽  
Author(s):  
M. Farahmand ◽  
C. Garetto ◽  
E. Bellotti ◽  
K.F. Brennan ◽  
M. Goano ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Wurtzite Phase

A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

1988 ◽  
Vol 53 (22) ◽  
pp. 2205-2207 ◽  
Author(s):  
K. Sadra ◽  
C. M. Maziar ◽  
B. G. Streetman ◽  
D. S. Tang
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Electron Transport ◽  
Monte Carlo Study ◽  
Electron Hole

scholarly journals A Monte-Carlo Simulation of the Behaviour of Electron Swarms in Hydrogen Using an Anisotropic Scattering Model

1978 ◽  
Vol 31 (4) ◽  
pp. 299 ◽  
Author(s):  
HA Blevin ◽  
J Fletcher ◽  
SR Hunter
Keyword(s):  
Experimental Data ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Anisotropic Scattering ◽  
Isotropic Scattering ◽  
Transport Parameters ◽  
Simulation Code ◽  
Scattering Model ◽  
Good Agreement

Hunter (1977) found that a Monte-Carlo simulation of electron swarms in hydrogen, based on an isotropic scattering model, produced discrepancies between the predicted and measured electron transport parameters. The present paper shows that, with an anisotropic scattering model, good agreement is obtained between the predicted and experimental data. The simulation code is used here to calculate various parameters which are not directly measurable.

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