scholarly journals Effects of Si-Layer-Thickness Ratio on UV-Light-Emission Intensity from Si/SiO<SUB>2</SUB> Multilayered Thin Films Prepared Using Radio-Frequency Sputtering

2015 ◽  
Vol 06 (03) ◽  
pp. 215-219
Author(s):  
Kenta Miura ◽  
Hitomi Hoshino ◽  
Masashi Honmi ◽  
Osamu Hanaizumi
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Layer Thickness ◽  
Emission Intensity ◽  
Light Emission ◽  
Uv Light ◽  
Layer Thickness Ratio ◽  
Radio Frequency Sputtering ◽  
Multilayered Thin Films ◽  
Light Emission Intensity

Combinatorial approach toward optimization of the light emission intensity of AlOxNy:Yb3+ thin films

2019 ◽  
Vol 58 (12) ◽  
pp. 3097 ◽  
Author(s):  
K. Y. Tucto ◽  
W. Aponte ◽  
J. A. Dulanto ◽  
J. A. Töfflinger ◽  
J. A. Guerra ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Light Emission ◽  
Combinatorial Approach ◽  
Light Emission Intensity

Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2689-2694
Author(s):  
J. A. Guerra ◽  
K. Tucto ◽  
L. M. Montañez ◽  
F. De Zela ◽  
J. A. Töfflinger ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Thermal Activation ◽  
Analytical Study ◽  
Annealing Temperature ◽  
Light Emission ◽  
Equation Model ◽  
Optically Active ◽  
Photon Excitation ◽  
Light Emission Intensity

ABSTRACTThe luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

Strong enhancement of 420∼425nm optical wavelength of blue LED by using CaF2 scintillating crystals as a cap

2012 ◽  
Vol 1392 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Hiroshi Nagayoshi ◽  
Kazutaka Terashima
Keyword(s):  
Visible Light ◽  
Blue Light ◽  
Emission Intensity ◽  
Light Emission ◽  
Uv Light ◽  
Blue Light Emission ◽  
Optical Window ◽  
Blue Led ◽  
Optical Wavelength ◽  
Light Emission Intensity

ABSTRACTIt has been found that the blue light emission of LED is remarkably enhanced by using optical window of CaF2 disk doped with Eu2O3. The CaF2 crystals doped with Eu2O3 strongly absorb UV light with 330~420nm optical wavelength as a cutting filter. Instead, CaF2 crystals emit 420~425nm wavelength visible light. As a result, the UV light shifts to a light of around 420nm wavelength, and the LED light emission intensity markedly increases. In our experiments, the UV components were absorbed, while, around 420nm emitting light has been strengthened by more than 30%. The FWHM value is improved by around 30%.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

Magnetron radio frequency sputtering growth of LaNi5 thin films and their hydrogen-sensitive properties at room temperature and ordinary pressure

2015 ◽  
Vol 331 ◽  
pp. 35-40 ◽  
Author(s):  
Han Tian ◽  
Kansong Chen ◽  
Huarong Liu ◽  
Kun Xie ◽  
Haoshuang Gu
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Room Temperature ◽  
Radio Frequency Sputtering

Study on the characteristics of partial discharges in voids under square voltage by detecting light emission intensity

2011 ◽  
Vol 18 (5) ◽  
pp. 1651-1657 ◽  
Author(s):  
Kai Wu ◽  
Cheng Pan ◽  
Yongpeng Meng ◽  
Changhao Sun ◽  
Minggang Gao ◽  
...  
Keyword(s):  
Emission Intensity ◽  
Light Emission ◽  
Partial Discharges ◽  
Light Emission Intensity

Radio frequency sputtering of ferrimagnetic thin films

1971 ◽  
Vol 21 (4-5) ◽  
pp. 558-562 ◽  
Author(s):  
R. Metselaar ◽  
P. Rem
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

Correlation between light emission intensity and partial discharge magnitude in voids

2008 ◽  
Author(s):  
Changhao Sun ◽  
Yongpeng Meng ◽  
Zide Guo ◽  
Minggang Gao ◽  
Kai Wu
Keyword(s):  
Emission Intensity ◽  
Light Emission ◽  
Partial Discharge ◽  
Light Emission Intensity

scholarly journals Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

2013 ◽  
Vol 102 (3) ◽  
pp. 032101 ◽  
Author(s):  
Thien Viet Pham ◽  
Manohar Rao ◽  
P. Andreasson ◽  
Yuan Peng ◽  
Junling Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering
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