scholarly journals Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor

2016 ◽  
Vol 07 (12) ◽  
pp. 895-907 ◽  
Author(s):  
Huan-Yi Cheng ◽  
Ying-Chung Chen ◽  
Chi-Lun Li ◽  
Pei-Jou Li ◽  
Mau-Phon Houng ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Coefficient ◽  
Single Layer ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Thin Film Resistors ◽  
Layer Thin Film

scholarly journals Computer Aided Design of Adjustable Thin Film Resistors

1980 ◽  
Vol 7 (1-3) ◽  
pp. 77-81
Author(s):  
Marcel Francois
Keyword(s):  
Thin Film ◽  
Computer Program ◽  
Computer Aided Design ◽  
Input Data ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Computer Aided ◽  
Thin Film Resistors ◽  
Aided Design

A computer program has been developed, which calculates any adjustable thin film resistor from simple input data (electrical, geometrical, positional, orientational), punched on “input cards”. The “output cards”, which contain the coordinates, are fed to a numerically controlled draughting machine, which produces either an intermediate ink-on-paper drawing or the final cut-and-strip artwork. Our CAD method proceeds in several steps, offering all the permitted solutions and providing for designer's options.

Study on Low TCR TaN Thin Film Resistors by D.C. Magnetron Sputtering

2014 ◽  
Vol 1082 ◽  
pp. 34-37 ◽  
Author(s):  
Bin Wang ◽  
Zhen Guo Song ◽  
Qian Tao Cao
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Anodic Oxidation ◽  
Oxidation Process ◽  
Ceramic Substrates ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Thin Film Resistors ◽  
Anodic Oxidation Process

In this paper, TaN thin film were deposited on ceramic substrates by D.C. magnetron sputtering. The surface morphology of two types of TaN thin film resistors were investigated by SEM. The characteristics of the TaN thin film resistor was also studied. The key point was put on the TCR of the TaN thin film resistors. The resistors were trimmed by the autoxidation process and the anodic oxidation process, and the TCR values of about +21ppm/°C and-137.3ppm/°C in average have been achieved respectively.

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

2014 ◽  
Vol 1082 ◽  
pp. 30-33
Author(s):  
Bin Wang ◽  
Qian Tao Cao ◽  
Zhen Guo Song
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Anodic Oxidation ◽  
Average Power ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Thin Film Resistors ◽  
Power Capability ◽  
Sputtering System

Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm2.

scholarly journals The Development of Precision Thin Film Resistors for Submerged Repeater Applications

1978 ◽  
Vol 5 (1) ◽  
pp. 9-14 ◽  
Author(s):  
D. O. Spiller
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Mathematical Model ◽  
Elevated Temperature ◽  
Electrochemical Corrosion ◽  
Life Test ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Diffusion Effects ◽  
Thin Film Resistors

The paper describes development of a low inductance thin film resistor series with a stability of ±0.15% change in resistance, over a 25 year life, in a submerged repeater environment. (40% RH maximum and 0 to 30℃ ambient temperature).It was first necessary to establish an appropriate mathematical model relating resistor stability with time and temperature. This was devised from experimental data based on measured resistor drift at various temperatures, and enabled acceleration of resistor drift to be carried out to ensure that each resistor possessed the required stability.Deposition of a secondary nichrome layer protects the gold/nichrome interface and promotes SiO2adhesion. This results in an improvement in the basic elevated temperature resistor stability by minimising diffusion effects of nichrome into the conductor, and protection against electrochemical corrosion as demonstrated by 10,000 hours life test at 83% RH @ 28℃ on 5 mW load and by elevated temperature tests under electrical loading.

Integration of Ta–N Thin Film Resistors on Anodic Alumina MCM-D Substrate

2009 ◽  
Vol 131 (1) ◽  
Author(s):  
Dapeng Zhu ◽  
Xiaoqin Lin ◽  
Le Luo
Keyword(s):  
Thin Film ◽  
Film Surface ◽  
Bottom Layer ◽  
Anodic Alumina ◽  
Tantalum Nitride ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Anodization Process ◽  
Thin Film Resistors ◽  
Aluminum Anodization

The aim of this work is to evaluate the changes in microstructures and electrical properties of a tantalum nitride (Ta–N) thin film integrated on an aluminum anodization multichip module deposited (MCM-D) substrate. A Ta–N resistor with a thickness of 100 nm was integrated at the bottom layer of the MCM-D substrate using rf reactive sputtering. Effects of aluminum anodization process on the Ta–N thin film resistor were studied. The results show that the oxide bulges composed of Ta2O5 and Ta–O–N are formed at the Ta–N film surface due to the effect of the upper layer of porous anodic alumina. The resistivity and the temperature coefficient of resistance of the Ta–N resistor remain unchanged. The integrated resistor is more stable owing to the protection of the oxide bulges.

The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid

2015 ◽  
Vol 36 (3) ◽  
pp. 271-273 ◽  
Author(s):  
Huey-Ru Chen ◽  
Ying-Chung Chen ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Coefficient ◽  
Film Resistor ◽  
Thin Film Resistor
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