scholarly journals Dielectric Breakdown Voltage and Dielectric Properties of High Voltage Mutilayer Ceramic Capacitor with C0G Temperature Coefficient Characteristics

2019 ◽  
Vol 6 (2) ◽  
pp. 413-423
Author(s):  
Abderrahmane Settaouti

The characteristics of impulse breakdown voltages and the influence of the position of third electrode in air gap are investigated experimentally to study the parameters influencing the breakdown voltage in the presence of metallic objects around the high voltage power apparatus with air insulation. Experimental results show that the factors affecting the breakdown voltage are the shape and the size of the grounded electrode, the third metallic electrode location and the gap length. A comparison between negative and positive polarities of the applied voltages indicates an important influence of the polarity in the dielectric breakdown mechanism. The possible mechanism by which the local electric discharge initiates the main dielectric breakdown seems to be the high electric field around the local discharge channel and the streamers protruding from its surface.


2018 ◽  
Vol 16 (3) ◽  
pp. 128
Author(s):  
I Made Yulistya Negara ◽  
Daniar Fahmi ◽  
Dimas Anton Asfani ◽  
Dwi Krisna Cahyaningrum

Pre-breakdown voltage is a phenomenon of dielectric breakdown affecting insulation’s performance. The faster pre-breakdown voltage of insulation, the more significant its dielectric degradation. In this paper, pre-breakdown voltage in oil insulation was investigated by using DC high voltage in laboratory scale. Under testing, the streamer development was recorded by using a high-resolution camera. The measured current was synchronized with an image that was picked up during the oil insulation testing. By this experiment, the characteristics of the current in phenomenon pre-breakdown voltage at oil insulation was studied. The results showed that the measured current of pre-breakdown phenomenon in oil insulation under 28 kV to 30 kV excitation voltage is in a range 100 mA - 150 mA.


Author(s):  
Luigi Balestra ◽  
Susanna Reggiani ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Jagoda Dobrzynska ◽  
...  

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.


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