Analisis Karakteristik Fenomena Pre-Breakdown Voltage Berbasis Pengujian pada Media Isolasi Minyak

Pre-breakdown voltage is a phenomenon of dielectric breakdown affecting insulation’s performance. The faster pre-breakdown voltage of insulation, the more significant its dielectric degradation. In this paper, pre-breakdown voltage in oil insulation was investigated by using DC high voltage in laboratory scale. Under testing, the streamer development was recorded by using a high-resolution camera. The measured current was synchronized with an image that was picked up during the oil insulation testing. By this experiment, the characteristics of the current in phenomenon pre-breakdown voltage at oil insulation was studied. The results showed that the measured current of pre-breakdown phenomenon in oil insulation under 28 kV to 30 kV excitation voltage is in a range 100 mA - 150 mA.

Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries

A possible way to realize a 22.5 nm 1⁄2 pitch and beyond BEOL interconnect structures within the low-kmaterial is the partial-trench via first with self-aligned double patterning (SADP) integration approach. A scheme of this BEOL integration stack with the different materials used after patterning is described in Figure 1. In BEOL processing, fluorocarbon-containing plasma is commonly used to pattern silica-based dielectric layers. During the patterning of the low-kdielectric layer, a thin layer of fluoropolymer (CFx-type residues) is intentionally deposited on the dielectric sidewalls and TiN hardmask to ensure anisotropic etching and prevent/minimize dielectric degradation. This polymer layer must be removed from the sidewall and the via bottom prior to the subsequent processing steps to achieve good adhesion and coverage of materials deposited in the etched features. The compatibility requirement is even more stringent for advanced low-kdielectrics, i.e. materials with lowerk-value and higher porosity. The post etch residue (PER) amount and properties are specific and depend on the stack structure and the plasma that is used for patterning. The low-kmaterials and hardmasks that are used in this work are respectively an organo-silicate glass (OSG) type of low-kmaterial withk= 2.4 (~20 % open porosity) and low-stress TiN. Recent results clearly showed the presence of a highly fluorinated layer deposited on the trench sidewalls during the plasma etch based on a fluorocarbon plasma [1-3]. Commodity aqueous cleaning solutions, such as diluted HF, do not efficiently remove the sidewall polymers without etching the underlying layer (lift-off). Therefore, there is a need for commercially available chemicals that can be easily tuned to deal with the different requirements. This study focuses on the use of FOTOPUR® R 2300 mixed with H2O2 for polymer residue removal selectively to other materials (presented in the stack) such as MHM, metals (Cu, W), and porous low-k dielectrics. We will show that TiN etch can be easily tuned by changing the concentration of H2O2.