scholarly journals PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering

2009 ◽  
Vol 10 (3) ◽  
pp. 89-92 ◽  
Author(s):  
Yan-Yan Liu ◽  
Hu-Jie Jin ◽  
Choon-Bae Park ◽  
Geun-C. Hoang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
P Type

p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering

2003 ◽  
Vol 259 (3) ◽  
pp. 279-281 ◽  
Author(s):  
Chao Wang ◽  
Zhenguo Ji ◽  
Kun Liu ◽  
Yin Xiang ◽  
Zhizhen Ye
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
P Type

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Comparing the performance of transparent, conductive ZnO/Ag/ZnO thin films that have an interlayer coating formed by either DC magnetron sputtering or HiPIMS

2019 ◽  
Vol 6 (12) ◽  
pp. 126410
Author(s):  
Anthika Lakhonchai ◽  
Artit Chingsungnoen ◽  
Phitsanu Poolcharuansin ◽  
Nitisak Pasaja ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering

2006 ◽  
Vol 496 (1) ◽  
pp. 89-94 ◽  
Author(s):  
Burag Yaglioglu ◽  
Yen-Jung Huang ◽  
Hyo-Young Yeom ◽  
David C. Paine
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Crystalline Phases
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