scholarly journals Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors

2009 ◽  
Vol 10 (6) ◽  
pp. 189-192
Author(s):  
Woo-Yang Jeong ◽  
Keun-Man Yi
Keyword(s):  
Leakage Current ◽  
Image Sensors ◽  
Shallow Trench Isolation ◽  
Cmos Image Sensors ◽  
Trench Isolation

MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 ◽  
Author(s):  
N. Ahmed ◽  
F. Roy ◽  
G-N. Lu ◽  
B. Mamdy ◽  
J-P. Carrere ◽  
...  
Keyword(s):  
Image Sensors ◽  
Mos Capacitor ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation

Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET

2011 ◽  
Vol 32 (6) ◽  
pp. 064004 ◽  
Author(s):  
Zhangli Liu ◽  
Zhiyuan Hu ◽  
Zhengxuan Zhang ◽  
Hua Shao ◽  
Ming Chen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deep Submicron ◽  
Gate Length ◽  
Shallow Trench Isolation ◽  
Length Dependence ◽  
Trench Isolation

scholarly journals Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process

Sensors ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 287
Author(s):  
Célestin Doyen ◽  
Stéphane Ricq ◽  
Pierre Magnan ◽  
Olivier Marcelot ◽  
Marios Barlas ◽  
...  
Keyword(s):  
Dark Current ◽  
Electrical Characterization ◽  
Image Sensors ◽  
Density Of State ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation ◽  
Key Factor

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.

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