Single Oriented CeO2 Buffer Layer Deposition On Biaxially Textured Ni-W Substrate By RF Magnetron Sputtering

2015 ◽  
Vol 6 (10) ◽  
pp. 883-887 ◽  
Author(s):  
K.M.K. Srivatsa
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Ceo2 Buffer Layer ◽  
Layer Deposition

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

GROWTH OF AZO FILMS ON BUFFER LAYERS BY RF MAGNETRON SPUTTERING

2010 ◽  
Vol 24 (31) ◽  
pp. 3033-3040 ◽  
Author(s):  
C. W. CHEN ◽  
C. H. TSENG ◽  
C. Y. HSU ◽  
C. P. CHOU ◽  
K. H. HOU
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Sheet Resistance ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Al Thin Film

Al 2 O 3-doped zinc oxide (in AZO, the Al 2 O 3 contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5–15 mTorr. The electrical resistivity of AZO films is about 2.22×10-3 Ωcm (sheet resistance ~ 89 Ω/square for a thickness ~ 250 nm), and the visible range transmittance is about 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO 2 buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained a c-axis-oriented AZO/ Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46×10-4 Ωcm (sheet resistance ~ 37.87 Ω/square for a thickness ~ 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO 2 buffer layer.

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering

2004 ◽  
Vol 264 (1-3) ◽  
pp. 110-115 ◽  
Author(s):  
Sang-Hun Jeong ◽  
Il-Soo Kim ◽  
Sang-Sub Kim ◽  
Jae-Keun Kim ◽  
Byung-Teak Lee
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Single Crystalline

Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering

2018 ◽  
Author(s):  
K. Tatejima ◽  
T. Nagata ◽  
K. Ishibashi ◽  
K. Takahashi ◽  
S. Suzuki ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering

The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

scholarly journals The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

2016 ◽  
Vol 30 (15) ◽  
pp. 1650279 ◽  
Author(s):  
Jinqiu Liu ◽  
Jianxin Lu ◽  
Jiang Yin ◽  
Bo Xu ◽  
Yidong Xia ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Memory Devices ◽  
Layer Deposition ◽  
High K ◽  
Charge Trapping Memory ◽  
Deposition Techniques ◽  
Composite Charge

The charge-trapping memory devices namely Pt/Al2O3/(Al2O[Formula: see text](Cu2O)[Formula: see text]/SiO2/[Formula: see text]-Si with 2, 3 and 4 nm SiO2 tunneling layers were fabricated by using RF magnetron sputtering and atomic layer deposition techniques. At an applied voltage of ±11 V, the memory windows in the C–V curves of the memory devices with 2, 3 and 4 nm SiO2 tunneling layers were about 4.18, 9.91 and 11.33 V, respectively. The anomaly in memory properties among the three memory devices was ascribed to the different back tunneling probabilities of trapped electrons in the charge-trapping dielectric (Al2O[Formula: see text](Cu2O)[Formula: see text] due to the different thicknesses of SiO2 tunneling layer.

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