Synthesis, Crystallization and Optical Properties of Potassium Nitrate Added L-alanine Single Crystals for Optoelectronic Device Applications

2019 ◽  
Vol 4 (4) ◽  
pp. ICMS 18-JP-23-ICMS 18-JP-23
Author(s):  
M. Shanmuga Sundaram
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Optoelectronic Device ◽  
Potassium Nitrate ◽  
Device Applications

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

scholarly journals Molecular doped organic semiconductor crystals for optoelectronic device applications

2020 ◽  
Vol 8 (43) ◽  
pp. 14996-15008
Author(s):  
Zhengsheng Qin ◽  
Can Gao ◽  
Wallace W. H. Wong ◽  
Moritz K. Riede ◽  
Tianyu Wang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Organic Semiconductor ◽  
Material Selection ◽  
Optoelectronic Device ◽  
Semiconductor Crystals ◽  
Device Applications

In this review, we give a timely summary of the current progress of molecular doped organic semiconductor single crystals in terms of material selection, crystal growth, resulting properties and device applications.

Growth, physicochemical and quantum chemical investigations on 2-amino 5-chloropyridinium 4-carboxybutanoate – an organic crystal for biological and optoelectronic device applications

RSC Advances ◽  
2016 ◽  
Vol 6 (112) ◽  
pp. 110884-110897 ◽  
Author(s):  
B. Babu ◽  
J. Chandrasekaran ◽  
B. Mohanbabu ◽  
Yoshitaka Matsushita ◽  
M. Saravanakumar
Keyword(s):  
Single Crystals ◽  
Quantum Chemical ◽  
Room Temperature ◽  
Optoelectronic Device ◽  
Solution Growth ◽  
Slow Evaporation ◽  
Growth Technique ◽  
Optically Transparent ◽  
Device Applications ◽  
Solution Growth Technique

Optically transparent organic single crystals of 2-amino 5-chloropyridinium 4-carboxybutanoate (2A5C4C) with sizes of 7 × 4 × 2 mm3 were grown by a slow evaporation solution growth technique at room temperature using methanol solvent.

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

1996 ◽  
Vol 74 (5-6) ◽  
pp. 202-208 ◽  
Author(s):  
M. Sacilotti ◽  
P. Abraham ◽  
M. Pitaval ◽  
M. Ambri ◽  
T. Benyattou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Conduction Band Edge ◽  
Type Ii ◽  
Semiconducting Materials ◽  
Band Bending ◽  
Device Applications ◽  
Pl Intensity ◽  
Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

An Overview of Conjugated Polymers in their Insulating Forms

1992 ◽  
Vol 247 ◽  
Author(s):  
Daniel J. Sandman
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Conjugated Polymers ◽  
Single Crystals ◽  
Optical Spectroscopy ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Device Applications ◽  
Linear Optical Properties ◽  
Linear Optical

ABSTRACTA brief overview is presented of the electrical and linear optical properties of conjugated polymers in their electrically insulating forms. Topics discussed include electronic structure and optical spectroscopy, thermochromism, and device applications, particularly electroluminescence. Structure-property relationships are stressed. Particular emphasis is placed on the properties of polydiacetylenes as they are available as macroscopic single crystals and, hence, are the best defined class of conjugated polymers.

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