ROLE OF SILICON CARBIDE CONTENT IN SOME ZONES OF WORKING SPACE OF FURNACES FOR SMELTING SILICON AND HIGH-SILICON FERROALLOYS

Metallurg ◽  
2021 ◽  
pp. 23-28
Author(s):  
A.V. Sivtsov ◽  
K.S. Yolkin ◽  
D.K. Yolkin ◽  
A.I. Karlina
Keyword(s):  
Silicon Carbide ◽  
Working Space ◽  
High Silicon ◽  
Carbide Content

Role of silicon carbide/mercury interface in ignitrons

1970 ◽  
Vol 3 (8) ◽  
pp. 1284-1289 ◽  
Author(s):  
M J Zarabi ◽  
M Satyam
Keyword(s):  
Silicon Carbide

Al+and N+implantation in silicon carbide: a role of point defect clusters in defect evolution

2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Defect Clusters ◽  
Defect Evolution ◽  
Point Defect Clusters

In-situ generation of graphene network in silicon carbide fibers: Role of iodine and carbon monoxide

Carbon ◽  
2020 ◽  
Vol 158 ◽  
pp. 110-120
Author(s):  
Junsung Hong ◽  
Youngjin Ko ◽  
Kwang-Yeon Cho ◽  
Dong-Geun Shin ◽  
Prabhakar Singh ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Silicon Carbide ◽  
Silicon Carbide Fibers ◽  
In Situ Generation

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Role of nano titania on the thermomechanical properties of silicon carbide refractories

2020 ◽  
Vol 46 (16) ◽  
pp. 25921-25926 ◽  
Author(s):  
S. Velappan ◽  
P. Nivedhita ◽  
R. Vimala ◽  
Sellappan Raja
Keyword(s):  
Silicon Carbide ◽  
Thermomechanical Properties

scholarly journals Role of rare earth oxide particles on the oxidation behaviour of silicon carbide coated 2.5D carbon fibre preforms

Open Ceramics ◽  
2020 ◽  
Vol 2 ◽  
pp. 100018
Author(s):  
T.S.R.C. Murthy ◽  
Lucas Reeman ◽  
Ji Zou ◽  
Vinothini Venkatachalam ◽  
Ben Baker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Rare Earth ◽  
Carbon Fibre ◽  
Rare Earth Oxide ◽  
Oxidation Behaviour ◽  
Oxide Particles
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