Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

2019 ◽  
Vol 963 ◽  
pp. 318-323 ◽  
Author(s):  
Antonella Parisini ◽  
Roberta Nipoti
Keyword(s):  
Doping Level ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Recent Literature ◽  
Extended Defects ◽  
Transport Mechanisms ◽  
As Doping ◽  
P Type ◽  
Ion Implanted

Fundamental aspects of transport in Al ion implanted p-type 4H-SiC are briefly reviewed, in the light of recent literature. Particular attention is paid on (i) the Hall factor and (ii) the role of disorder in the onset of a variable range hopping mechanism (VRH) at high temperatures as doping level increases, up to a 2D-VRH induced by extended defects in the heaviest doped samples. The study allowed to understand the critical balance between implanted impurity density and annealing temperature that leads to the searched doping level, ensuring an efficient electrical activation of implanted impurities, on a side, and, on the other side, avoiding stacking faults that cause anisotropic hopping transport.

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Carrier transport mechanisms through the metal/p-type diamond semiconductor interface

1997 ◽  
Vol 6 (5-7) ◽  
pp. 847-851 ◽  
Author(s):  
Y. Koide ◽  
M. Yokoba ◽  
A. Otsuki ◽  
F. Ako ◽  
T. Oku ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms ◽  
Semiconductor Interface ◽  
P Type

Barrier properties and current conduction mechanism for metal contacts to lightly and highly doped p-type 4H-SiC

2021 ◽  
Author(s):  
Lingqin Huang ◽  
Yue Ma ◽  
Sumin Pan ◽  
Jing Zhu ◽  
Xiaogang Gu
Keyword(s):  
Carrier Transport ◽  
Theoretical Calculations ◽  
Thermionic Emission ◽  
Barrier Properties ◽  
Emission Model ◽  
Metal Contacts ◽  
Barrier Heights ◽  
Thermionic Field Emission ◽  
Barrier Inhomogeneities ◽  
P Type

Abstract The barrier properties of Ti, Ni and Pt contact to lightly (9×1016 cm-3) and highly (9×1018 cm-3) doped p-type 4H-SiC were investigated. It is found that the barrier heights and ideality factors estimated from thermionic emission model for the lightly doped samples are non-ideal and abnormally temperature dependent. The anomalies have been successfully explained in terms of both pinch-off model and Gaussian distribution of inhomogeneous barrier heights. In addition, the evaluated homogeneous barrier heights are reasonably close to the average barrier heights from capacitance-voltage measurements. For the highly doped samples, thermionic field emission (TFE) is found to be the dominant carrier transport mechanism. The barrier heights estimated from TFE model are temperature independent. If the barrier inhomogeneities and tunneling effects are considered, the experimental results of the samples are in well agreement with the theoretical calculations.

Role of Dopants in Long-Range Charge Carrier Transport for p-Type and n-Type Graphene Transparent Conducting Thin Films

ACS Nano ◽  
2013 ◽  
Vol 7 (8) ◽  
pp. 7251-7261 ◽  
Author(s):  
Justin B. Bult ◽  
Ryan Crisp ◽  
Craig L. Perkins ◽  
Jeffrey L. Blackburn
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Long Range ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Transparent Conducting ◽  
P Type

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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