scholarly journals Properties Study of SILAR Deposited Cobalt Selenide Thin Films

2021 ◽  
Vol 8 (12) ◽  
pp. 119-124
Author(s):  
Ho Soonmin
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
Cubic Phase ◽  
Flat Panel Displays ◽  
Simple Method ◽  
Xrd Pattern ◽  
Light Emitting ◽  
Layer Adsorption ◽  
Cobalt Selenide ◽  
Silar Technique

Thin films are attractive materials to be used in laser, solar cells, sensors, phosphors, light emitting diodes, IR windows and flat panel displays. Several deposition methods have been employed to deposit thin films as reported by many researchers. In this report, the cobalt selenide thin films have been deposited onto microscope glass slide via successive ionic layer adsorption and reaction method. This deposition method is a simple method owing to the inexpensive technique and can produce films at a low bath temperature. All the samples were investigated by using XRD, FESEM and UV-visible spectrophotometer. The XRD pattern confirmed that cubic phase cobalt selenide thin films. The FESEM image exhibited that the obtained sample is dense, uniform, and smooth surface. Keywords: XRD, FESEM, Thin films, Cobalt selenide, SILAR technique, Semiconductor, Band gap.

scholarly journals Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

2021 ◽  
Vol 37 (4) ◽  
pp. 791-796
Author(s):  
Ho Soon Min ◽  
Ng Sha Shiong
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Structure Morphology ◽  
Layer Adsorption ◽  
Xrd Patterns ◽  
First Time ◽  
Cobalt Selenide

The successive ionic layer adsorption and reaction method or called SILAR method was used to produce cobalt selenide thin films for the first time. The deposition was carried out onto the substrate under different various pH values. The X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet visible spectrophotometer were used to investigate the structure, morphology and optical properties of thin films, respectively. The XRD patterns confirmed that the presence of cubic phase cobalt selenide thin films. The grain size increased with increasing the pH value from pH 2 to pH 4 based on the FESEM images. The band gap values are in the range of 2 eV to 2.5 eV.

Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (6) ◽  
pp. 983-986 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markka Leskelä
Keyword(s):  
Thin Films ◽  
Lead Selenide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer
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