Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100275 ◽

1988 ◽

Vol 53 (22) ◽

pp. 2179-2181 ◽

Cited By ~ 7

Author(s):

G. L. Zhou ◽

K. M. Chen ◽

W. D. Jiang ◽

C. Sheng ◽

X. J. Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Heteroepitaxial Growth ◽

Si Substrates

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Heteroepitaxial growth of Al2O3 film on Si by remote rf plasma-excited metalorganic molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50053-5 ◽

1994 ◽

pp. 289-294

Author(s):

Kiyoteru Hayama ◽

Makoto Ishida ◽

Tetsuro Nakamura

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Rf Plasma ◽

Heteroepitaxial Growth ◽

Al2o3 Film ◽

Metalorganic Molecular Beam Epitaxy

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An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

Surface Science ◽

10.1016/0039-6028(95)01220-6 ◽

1996 ◽

Vol 352-354 ◽

pp. 646-650 ◽

Cited By ~ 17

Author(s):

G.M. Guryanov ◽

G.E. Cirlin ◽

A.O. Golubok ◽

S.Ya. Tipissev ◽

N.N. Ledentsov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Heteroepitaxial Growth

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Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

MRS Proceedings ◽

10.1557/proc-160-521 ◽

1989 ◽

Vol 160 ◽

Cited By ~ 2

Author(s):

Tetsuroh Minemura ◽

Junko Asano ◽

Kazuo Tsutsui ◽

Seijiro Furukawa

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Epitaxial Layers ◽

Considerable Influence ◽

Heteroepitaxial Growth ◽

Remarkable Effect

AbstractHeteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

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