scholarly journals Design, simulation and optimization of a single stage Low Noise Amplifier (LNA) for very low power L- Band satellite handheld applications

2018 ◽  
Vol 17 (2) ◽  
pp. 37-42
Author(s):  
Mohammad Mohiuddin Uzzal
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Center Frequency ◽  
Simulation And Optimization ◽  
Consumption Cost ◽  
Design Systems ◽  
L Band ◽  
Noise Amplifier

In first stage of each microwave receiver, there is a Low Noise Amplifier (LNA) stage, and this LNA plays an important role to determine the quality factor of the receiver. The design of a LNA requires the trade-off of many important parameters including gain, Noise Figure (NF), stability, power consumption, cost and design complexity. In this paper, we have designed and simulate a single stage stable LNA circuit having gain 11.78 dB and noise figure 1.86 dB using microwave BJT AT3103 with Agilent package Advance Design Systems (ADS). This LNA operates at center frequency of 2 GHZ and it can be used in L-Band satellite modem for tracking applications.

scholarly journals Research and Design of X-band Low Noise Amplifier Based on CMOS Process

2021 ◽  
Vol 2108 (1) ◽  
pp. 012102
Author(s):  
Chao Ma ◽  
Hongjiang Wu ◽  
Xudong Lu ◽  
Haitao Sun
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Cmos Process ◽  
Actual Measurement ◽  
Chip Area ◽  
Chip Size ◽  
Noise Amplifier ◽  
Stage Matching

Abstract Based on CMOS process, a low noise amplifier(LNA) operating at 7.4GHz~11.4GHz was designed. The two-stage differential cascode structure is adopted. Transformer was used to achieve inter-stage matching. Balun was used to achieve input and output matching, which reduces the number of inductors used, effectively reduces the chip size while ensuring good gain and noise figure. The actual measurement results show that the power gain at the center frequency of 9.4GHz is 27dB, the maximum noise figure is less than 3.82dB, the output power 1dB compression point is greater than 8dBm, the chip area is only 0.41mm×0.83mm(excluding PAD).

scholarly journals Design and Implementation of Low Noise Amplifier At 60ghz using Current Mirror Feedback

2019 ◽  
Vol 8 (9S3) ◽  
pp. 249-254
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Small Signal ◽  
Total Size ◽  
Noise Amplifier

This discourse used 45nm CMOS technology to design a Low noise amplifier for a Noise figure < 2dB and gain greater than 13dB at the 60GHz unlicensed band of frequency. A single stage, primary cascode LNA is modeled and its small signal model is analyzed. Common source structure is hired in the driver stage to escalate the output power with single stage contours. To enhance small signal gain, simple active transistor feedback and cascode feedback configurations are designed and appended to the basic LNA. In addition to this, current re-use inductor is designed and added to the cascode amplifier which is deliberated to give low power and low noise figure. Small signal analysis of simple active transistor feedback and current re-use inductor has been presented. The measurement results indicated that the input match and the output gain at 60GHz achieves -8dB and 13dB respectively with the supply voltage of 900mV. The frequency response obtained is a narrow band response with 6GHz of bandwidth. The circuit is simulated by Cadence Virtuoso tool. The layout of the related circuit is drawn by means of the Virtuoso Layout editor with total size of 0.1699μm2.

scholarly journals Design of Low Power Low Noise Amplifier using Gm-boosted Technique

2018 ◽  
Vol 9 (3) ◽  
pp. 685 ◽  
Author(s):  
Maizan Muhamad ◽  
Norhayati Soin ◽  
Harikrishnan Ramiah
Keyword(s):  
Low Power ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Wireless Lan ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Design Specifications ◽  
Noise Amplifier

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.

A 79GHz Adaptive Gain Low Noise Amplifier for Radar Receivers

2018 ◽  
Vol 7 (2.24) ◽  
pp. 227
Author(s):  
J Manjula ◽  
A Ruhan Bevi
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Cmos Technology ◽  
Input Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Center Frequency ◽  
Common Source ◽  
Adaptive Biasing ◽  
Noise Amplifier

This paper presents an Adaptive Gain 79GHz Low Noise Amplifier (LNA) suitable for Radars applications. The circuit schematic is a two stage LNA consists of Differential cascode configuration followed by a simple common source amplifier with an Adaptive Biasing (ADB) circuit. Adaptive biasing is a three- stage common source amplifier to decrease output voltage as input power increases. The circuit is simulated in 180nm CMOS technology and the simulation results have proved that the circuit operates at the center frequency 79GHz with adaptive biasing for adaptive gain. The gain analysis shows a decrease of 35-30dB with an increase in input power -50 to 0 dB. At 79GHz the circuit has achieved the input reflection coefficient (S11) of -24.7dB, reverse isolation (S12) of -3 dB, forward transmission coefficient (S21) of -2.97dB and output reflection coefficient (S22) of -5.62 dB with the reduced noise figure of 0.9 dB and a power consumption of 236 mW.  

scholarly journals Single Stage 38 GHz LNA using 0.1 μm GaAs HEMT

2019 ◽  
Vol 9 (2S3) ◽  
pp. 274-276
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Common Source ◽  
Active Device ◽  
Noise Amplifier

Design of a 38 GHz low noise amplifier using a single stage common source (SSCS) with source degenerated with inductor topology with gain of 9 dB and noise figure (NF) of 1.5 dB using 0.1 µm GaAs pHEMT as active device is proposed in this paper. CS with source degenerated with inductor topology of 0.1 µm GaAs pHEMT resulted a very low NF compared to other HEMT technologies as well as other CMOS technologies at this RF range.

scholarly journals Low Noise Amplifier using Darlington Pair At 90nm Technology

2018 ◽  
Vol 8 (4) ◽  
pp. 2054
Author(s):  
Rashmi Singh ◽  
Rajesh Mehra
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Phase Mismatch ◽  
Low Noise Amplifier ◽  
Single Stage ◽  
Cmos Process ◽  
Trade Off ◽  
Satellite Applications ◽  
Three Stages ◽  
Noise Amplifier

<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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