scholarly journals A Review On Variable MEMS Mirrors For Photo-Lithographic Masks

2013 ◽  
Vol 1 (1) ◽  
pp. 7-14
Author(s):  
Mehmet Akif Erismis
Keyword(s):  
Lithographic Masks

Fine Tuning of Lithographic Masks through Thin Films of PS-b-PMMA with Different Molar Mass by Rapid Thermal Processing

2014 ◽  
Vol 6 (10) ◽  
pp. 7180-7188 ◽  
Author(s):  
Federico Ferrarese Lupi ◽  
Tommaso Jacopo Giammaria ◽  
Gabriele Seguini ◽  
Francesco Vita ◽  
Oriano Francescangeli ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Molar Mass ◽  
Rapid Thermal Processing ◽  
Fine Tuning ◽  
Lithographic Masks

In-Plane Gravity Loading of a Circular Membrane

2000 ◽  
Vol 67 (4) ◽  
pp. 837-839 ◽  
Author(s):  
R. O. Tejeda ◽  
E. G. Lovell ◽  
R. L. Engelstad
Keyword(s):  
Displacement Field ◽  
Ion Beam ◽  
Stress And Strain ◽  
Circular Membrane ◽  
Next Generation ◽  
Projection Lithography ◽  
Beam Projection ◽  
Lithographic Masks

This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]

Semiconductor Nanostructures defined by self-organizing Polymers

2002 ◽  
Vol 728 ◽  
Author(s):  
Michael Haupt ◽  
Stephan Miller ◽  
Andreas Ladenburger ◽  
Rolf Sauer ◽  
Klaus Thonke ◽  
...  
Keyword(s):  
Diblock Copolymers ◽  
Gold Film ◽  
Metal Cluster ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Porous Gold ◽  
Total Analysis System ◽  
Image Reversal ◽  
Analysis System ◽  
Lithographic Masks

AbstractIn the near future it will be more and more important to produce real nanometer-sized structures for semiconductor devices (e.g., quantum dot lasers) but also for nano-biomechanical applications like the so-called total analysis system implemented on one chip.We describe here a technique to create nanometer-sized structures in semiconductors and metals by the use of self-assembling diblock copolymers as nano-lithographic masks. Semiconductor quantum structures with very high aspect ratio of 1:10 were fabricated from III-V semiconductor heterostructures by anisotropic dry etching. In a first step, so-called diblock copolymer micelles were generated in a toluene solution. These micelles were loaded by a noblemetal salt. With a “Langmuir Blodgett” technique we can decorate complete wafers with a monolayer of highly ordered micelles, covering almost the complete surface. After treatment in a hydrogen plasma all of the organic components are removed and only crystalline metal clusters of ~12 nm size remain. This metal cluster mask can be used directly in a highly anisotropic chlorine dry etching process to etch cylinders in GaAs and its In and Al alloys. It is also possible to etch through a quantum well layer underneath the surface in order to produce quantum dots.By evaporating metals and applying a wet chemical image reversal process, we can invert the etched structure and generate a gauzy gold film with nano-holes inside. It is thinkable to use this porous gold film as a nano-filter in upcoming nano-biotechnology applications.

Optimization of lithographic masks using genetic algorithms

2006 ◽  
Vol 48 (1) ◽  
pp. 49-56 ◽  
Author(s):  
U. Triltsch ◽  
A. Phataralaoha ◽  
S. Büttgenbach ◽  
D. Straube ◽  
H. -J. Franke
Keyword(s):  
Genetic Algorithms ◽  
Lithographic Masks

scholarly journals Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Andreas Erdmann ◽  
Dongbo Xu ◽  
Peter Evanschitzky ◽  
Vicky Philipsen ◽  
Vu Luong ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Incident Light ◽  
Extreme Ultraviolet Lithography ◽  
Imaging Analysis ◽  
Partial Reflection ◽  
Ultraviolet Lithography ◽  
Euv Lithography ◽  
Imaging Artifacts ◽  
Lithographic Masks ◽  
Reflective Systems

AbstractThe reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the projection imaging of these masks by all-reflective systems introduce several significant imaging artifacts. The off-axis illumination of the mask causes asymmetric shadowing, a size bias between features with different orientations and telecentricity errors. The image contrast varies with the feature orientation and can easily drop far below intuitively expected values. The deformation of the wavefront or phase of the incident light by thick absorbers generates aberration-like effects, especially variations of the best-focus (BF) position vs. the pitch and size of the imaged patterns. Partial reflection of light from the top of the absorber generates a weak secondary image, which superposes with the main image. Based on a discussion of the root causes of these phenomena, we employ mask diffraction and imaging analysis for a quantitative analysis of these effects for standard EUV masks. Simulations for various non-standard types of mask stacks (e.g. etched multilayers, buried shifters, etc.) and for various non-standard absorber materials are used to explore the imaging capabilities of alternative masks for EUV lithography. Finally, an outlook at anamorphic systems for larger numerical apertures is given.

Removal of particles from lithographic masks through plasma-assisted cleaning by metastable atomic neutralization

2008 ◽  
Author(s):  
W. M. Lytle ◽  
D. S. Szybilski ◽  
C. E. Das ◽  
R. Raju ◽  
V. Surla ◽  
...  
Keyword(s):  
Lithographic Masks

Dynamics of dislocations in a two-dimensional block copolymer system with hexagonal symmetry

2011 ◽  
Vol 369 (1935) ◽  
pp. 335-350 ◽  
Author(s):  
Aldo D. Pezzutti ◽  
Daniel A. Vega ◽  
Marcelo A. Villar
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Topological Defects ◽  
Two Dimensional ◽  
Significant Progress ◽  
Hexagonal Symmetry ◽  
Scale Selection ◽  
Long Range Ordering ◽  
Lithographic Masks

Block copolymer thin films have attracted considerable attention for their ability to self-assemble into nanometre-scale architectures. Recent advances in the use of block copolymer thin films as nano-lithographic masks have driven research efforts in order to have better control of long-range ordering in the plane of the film. Irrespective of the method of sample preparation, different quasi-two-dimensional systems with hexagonal symmetry unavoidably contain translational defects, called dislocations. Dislocations control the process of coarsening in the nano/meso-scales and provide one of the most important mechanisms of length-scale selection in hexagonal patterns. Although in the last decade the nonlinear dynamics of topological defects in quasi-two-dimensional systems has witnessed significant progress, still little is known about the role of external fields on the creation and annihilation mechanisms involved in the relaxation process towards equilibrium states. In this paper, the dynamics of dislocations in non-optimal hexagonal patterns is studied in the framework of the Ohta–Kawasaki model for a diblock copolymer. Measurements of the climb and glide velocities as a function of the wave vector deformation reveal the main mechanisms of relaxation associated with the motion of dislocations.

Improving lithographic masks with the assistance of indentations

2012 ◽  
Vol 21 (5) ◽  
pp. 057301 ◽  
Author(s):  
Ying-Nan Guo ◽  
Xu-Feng Li ◽  
Shi Pan ◽  
Qiao Wang ◽  
Shuo Wang ◽  
...  
Keyword(s):  
Lithographic Masks
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