scholarly journals Testing Absolute vs Relative Simultaneity with the Spin-orbit Interaction and the Sagnac Effect

2019 ◽  
Vol 11 (4) ◽  
pp. 59 ◽  
Author(s):  
Gianfranco Spavieri ◽  
Miguel Rodriguez ◽  
Arturo Sanchez
Keyword(s):  
Relativistic Effect ◽  
Thought Experiment ◽  
Light Signal ◽  
Orbit Interaction ◽  
Sagnac Effect ◽  
Spin Orbit ◽  
Round Trip ◽  
Spin Orbit Interaction ◽  
Length Contraction ◽  
Absolute Synchronization

All the experiments supporting special relativity (SR) formulated with Einstein synchronization support as well SR with absolute synchronization, if the corresponding coordinate transformations foresee time dilation and length contraction. We first test absolute vs relative simultaneity with a non-relativistic model of the spin-orbit interaction by taking into account either the effect of the electron hidden momentum or the relativistic effect of the Thomas precession, based on non-conservation of simultaneity. As second test, we consider a thought experiment equivalent to the Sagnac effect, where a clock measures the time taken by a counter-propagating light signal to perform a round trip on a closed path. While these experiments are coherently described with absolute simultaneity, the result of our tests points out inconsistencies in the case of relative simultaneity, thus favoring the formulation of SR with absolute synchronization, while advocating that further research and tests on simultaneity are needed for the comprehension of relativistic theories.

Why the Sagnac effect favors absolute over relative simultaneity

2019 ◽  
Vol 32 (3) ◽  
pp. 331-337 ◽  
Author(s):  
Gianfranco Spavieri ◽  
Espen Gaarder Haug
Keyword(s):  
Special Relativity ◽  
Thought Experiment ◽  
Relativistic Effects ◽  
Light Signal ◽  
Sagnac Effect ◽  
Closed Path ◽  
Speed Of Light ◽  
Round Trip ◽  
The One ◽  
Absolute Synchronization

We consider a thought experiment, equivalent to the Sagnac effect, where a light signal performs a round trip over a closed path. If special relativity (SR) adopts Einstein synchronization, the result of the experiment shows that the local light speed cannot be c in every section of the closed path. No inconsistencies are found when adopting absolute synchronization. Since Einstein and absolute synchronizations can be discriminated, the conventionality of the one-way speed of light holds no longer. Thus, as sustained by specialists, it might be a viable formulation of SR that reinstates the conservation of simultaneity, even though it allows for relativistic effects, such as time dilation. Such an approach may lead to the discovery of new effects and a better understanding of relativistic theories.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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