scholarly journals Theoretical Electronic Structure of the Lowest-Lying Electronic States of the CaBr Molecule

2014 ◽  
Vol 6 (2) ◽  
Author(s):  
H. Jawhari ◽  
M. Korek ◽  
R. Awad ◽  
M. R. Sakr
Keyword(s):  
Electronic Structure ◽  
Electronic States

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Relation between oxygen stoichiometry and thermodynamic properties and the electronic structure of nonstoichiometric perovskite La0.6Sr0.4CoO3−δ

2016 ◽  
Vol 18 (42) ◽  
pp. 29543-29548 ◽  
Author(s):  
S. F. Bychkov ◽  
A. G. Sokolov ◽  
M. P. Popov ◽  
A. P. Nemudry
Keyword(s):  
Electronic Structure ◽  
Thermodynamic Properties ◽  
Fermi Level ◽  
Electronic States ◽  
Oxygen Activity ◽  
Oxygen Stoichiometry ◽  
Itinerant Electron ◽  
Electron Model ◽  
Density Of Electronic States

Within the framework of the itinerant electron model, the dependence of the oxide nonstoichiometry on the oxygen activity was related to the density of electronic states near the Fermi level.

Electronic structure of NixTiSe2 (0.05 ≤ x ≤ 0.46) compounds with ordered and disordered Ni

2017 ◽  
Vol 19 (6) ◽  
pp. 4500-4506 ◽  
Author(s):  
A. S. Shkvarin ◽  
Yu. M. Yarmoshenko ◽  
A. I. Merentsov ◽  
Yu. M. Zhukov ◽  
A. A. Titov ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Absorption Spectroscopy ◽  
Theoretical Calculations ◽  
Electronic States ◽  
Intercalation Compounds ◽  
X Ray ◽  
Density Of Electronic States ◽  
X Ray Absorption

The electronic structure of NixTiSe2 intercalation compounds with disordered and ordered Ni atoms is studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray spectra and density of electronic states.

ELECTRONIC STATES OF NANOSTRUCTURES OF CURVED GRAPHITIC CARBON CAGES

1996 ◽  
Vol 03 (01) ◽  
pp. 835-842 ◽  
Author(s):  
M. TSUKADA ◽  
K. AKAGI ◽  
R. TAMURA ◽  
S. IHARA
Keyword(s):  
Carbon Nanotubes ◽  
Electronic Structure ◽  
Systematic Study ◽  
Tight Binding ◽  
Electronic States ◽  
Graphitic Carbon ◽  
Graphitic Layer ◽  
Binding Models ◽  
Structure Of Carbon Nanotubes

Electronic structure of carbon nanotubes with cap and that of the helically coiled nanotubes are studied by the simple tight-binding models. The method of the development map is used for a systematic study of the electronic states. Several remarkable features of these cage structures are found and the relation to the topological disorders due to the disclination centers is discussed, which are inherent to the curved graphitic layer.

scholarly journals Soft X-ray spectroscopic studies of the electronic structure of M:BiVO4(M = Mo, W) single crystals

2015 ◽  
Vol 3 (47) ◽  
pp. 23743-23753 ◽  
Author(s):  
V. Jovic ◽  
J. Laverock ◽  
A. J. E. Rettie ◽  
J.-S. Zhou ◽  
C. B. Mullins ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Electronic States ◽  
Spectroscopic Studies ◽  
X Ray

X-ray spectroscopy reveals the presence of inter-band gap electronic states of egsymmetry in M:BiVO4(M = Mo, W) PEC anodes.

Electronic structure of the ground and low-lying electronic states of MoB and MoB+

2011 ◽  
Vol 111 (13) ◽  
pp. 3362-3370 ◽  
Author(s):  
Antonio Carlos Borin ◽  
João Paulo Gobbo
Keyword(s):  
Electronic Structure ◽  
Electronic States

Energetics and electronic structure of point defects associated with oxygen excess at a tilt boundary of ZnO

2000 ◽  
Vol 15 (10) ◽  
pp. 2167-2175 ◽  
Author(s):  
Fumiyasu Oba ◽  
Hirohiko Adachi ◽  
Isao Tanaka
Keyword(s):  
Electronic Structure ◽  
Point Defects ◽  
First Principles ◽  
Electronic States ◽  
Tilt Boundary ◽  
Oxygen Excess ◽  
Zno Varistors ◽  
Formation Energies ◽  
Defect Species ◽  
Static Lattice

The formation energies and electronic structure of zinc vacancies and oxygen interstitials at a tilt boundary of ZnO were investigated by a combination of static lattice and first-principles molecular orbital methods. For both of the defect species, the formation energies were lower than those of the bulk defects at certain sites in the grain boundary. The defects with low formation energies formed electronic states close to the top of the valence band. The interfacial electronic states observed experimentally in ZnO varistors cannot be explained solely by the point defects associated with the oxygen excess: the effects of impurities should be significant for the states.

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