Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors

2015 ◽  
Vol 15 (5) ◽  
pp. 526-532 ◽  
Author(s):  
Jonghwa Kim ◽  
Sungju Choi ◽  
Jaeman Jang ◽  
Jun Tae Jang ◽  
Jungmok Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Instability Mechanism ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Indium Zinc Oxide ◽  
Drain Bias

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

2019 ◽  
Vol 30 (14) ◽  
pp. 12929-12936
Author(s):  
Dong Lin ◽  
Xudong Zheng ◽  
Jianwen Yang ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Annealing Effects
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